生命周期: | Contact Manufacturer | 包装说明: | VFBGA, |
Reach Compliance Code: | unknown | 风险等级: | 5.62 |
Is Samacsys: | N | 访问模式: | FOUR BANK PAGE BURST |
最长访问时间: | 0.7 ns | 其他特性: | AUTO/SELF REFRESH |
JESD-30 代码: | R-PBGA-B60 | 长度: | 13 mm |
内存密度: | 268435456 bit | 内存集成电路类型: | DDR DRAM |
内存宽度: | 16 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 60 |
字数: | 16777216 words | 字数代码: | 16000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 16MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | VFBGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
座面最大高度: | 1 mm | 自我刷新: | YES |
最大供电电压 (Vsup): | 2.7 V | 最小供电电压 (Vsup): | 2.3 V |
标称供电电压 (Vsup): | 2.5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 宽度: | 8 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M13S2561616A-5BIG2K | ESMT |
获取价格 |
DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE | |
M13S2561616A-5BIG2S | ESMT |
获取价格 |
DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, B | |
M13S2561616A-5TG | ESMT |
获取价格 |
4M x 16 Bit x 4 Banks Double Data Rate SDRAM | |
M13S2561616A-5TG2A | ESMT |
获取价格 |
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2 | |
M13S2561616A-5TG2K | ESMT |
获取价格 |
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2 | |
M13S2561616A-5TIG | ESMT |
获取价格 |
4M x 16 Bit x 4 Banks Double Data Rate SDRAM | |
M13S2561616A-5TIG2A | ESMT |
获取价格 |
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2 | |
M13S2561616A-5TIG2K | ESMT |
获取价格 |
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2 | |
M13S2561616A-5TIG2S | ESMT |
获取价格 |
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2 | |
M13S2561616A-6BG | ESMT |
获取价格 |
4M x 16 Bit x 4 Banks Double Data Rate SDRAM |