生命周期: | Contact Manufacturer | 包装说明: | VFBGA, |
Reach Compliance Code: | unknown | 风险等级: | 5.59 |
访问模式: | FOUR BANK PAGE BURST | 最长访问时间: | 5.5 ns |
其他特性: | AUTO/SELF REFRESH | JESD-30 代码: | S-PBGA-B54 |
长度: | 8 mm | 内存密度: | 67108864 bit |
内存集成电路类型: | SYNCHRONOUS DRAM | 内存宽度: | 16 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 54 | 字数: | 4194304 words |
字数代码: | 4000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 4MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | VFBGA | 封装形状: | SQUARE |
封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 座面最大高度: | 1 mm |
自我刷新: | YES | 最大供电电压 (Vsup): | 3.6 V |
最小供电电压 (Vsup): | 3 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
宽度: | 8 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
M12L64164A-6BG2Y | ESMT |
获取价格 |
1M x 16 Bit x 4 Banks | |
M12L64164A-6BIG | ESMT |
获取价格 |
1M x 16 Bit x 4 Banks Synchronous DRAM | |
M12L64164A-6BIG2M | ESMT |
获取价格 |
Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD F | |
M12L64164A-6BIG2Y | ESMT |
获取价格 |
Synchronous DRAM, 4MX16, 5.5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD F | |
M12L64164A-6TA | ESMT |
获取价格 |
1M x 16 Bit x 4 Banks Synchronous DRAM | |
M12L64164A-6TG | ESMT |
获取价格 |
1M x 16 Bit x 4 Banks Synchronous DRAM | |
M12L64164A-6TG2C | ESMT |
获取价格 |
暂无描述 | |
M12L64164A-6TG2M | ESMT |
获取价格 |
Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE | |
M12L64164A-6TG2Y | ESMT |
获取价格 |
1M x 16 Bit x 4 Banks | |
M12L64164A-6TIG | ESMT |
获取价格 |
1M x 16 Bit x 4 Banks Synchronous DRAM |