Datasheet > EN29LV400T-55RBCP

EN29LV400T-55RBCP

更新时间： 2024-01-14 14:01:55

品牌	Logo	应用领域
晶豪 - ESMT		内存集成电路
页数	文件大小	规格书
42页	318K
描述
Flash, 256KX16, 55ns, PBGA48, FBGA-48

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EN29LV400T-55RBCP 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	TFBGA, BGA48,6X8,32	Reach Compliance Code：	unknown
风险等级：	5.57	最长访问时间：	55 ns
备用内存宽度：	8	启动块：	TOP
命令用户界面：	YES	数据轮询：	YES
耐久性：	100000 Write/Erase Cycles	JESD-30 代码：	R-PBGA-B48
长度：	8 mm	内存密度：	4194304 bit
内存集成电路类型：	FLASH	内存宽度：	16
功能数量：	1	部门数/规模：	1,2,1,7
端子数量：	48	字数：	262144 words
字数代码：	256000	工作模式：	ASYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	256KX16	封装主体材料：	PLASTIC/EPOXY
封装代码：	TFBGA	封装等效代码：	BGA48,6X8,32
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行：	PARALLEL	电源：	3.3 V
编程电压：	3.3 V	认证状态：	Not Qualified
就绪/忙碌：	YES	座面最大高度：	1.1 mm
部门规模：	16K,8K,32K,64K	最大待机电流：	0.000005 A
子类别：	Flash Memories	最大压摆率：	0.03 mA
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	3 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	BALL	端子节距：	0.8 mm
端子位置：	BOTTOM	切换位：	YES
类型：	NOR TYPE	宽度：	6 mm
Base Number Matches：	1

EN29LV400T-55RBCP 数据手册

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EN29LV400

da0.

4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory

Boot Sector Flash Memory, CMOS 3.0 Volt-only

FEATURES

• 3V, single power supply operation

• High performance program/erase speed

- Byte/Word program time: 8µs typical

- Sector erase time: 500ms typical

- Full voltage range: 2.7-3.6 volt read and write

operations for battery-powered applications.

- Regulated voltage range: 3.0-3.6 volt read

and write operations and for compatibility with

high performance 3.3 volt microprocessors.

• JEDEC Standard program and erase

commands

• JEDEC standard

bits feature

polling and toggle

DATA

• High performance

- Access times as fast as 45 ns

• Single Sector and Chip Erase

• Sector Unprotect Mode

• Low power consumption (typical values at 5

MHz)

- 7 mA typical active read current

- 15 mA typical program/erase current

- 1 µA typical standby current (standard access

time to active mode)

• Embedded Erase and Program Algorithms

• Erase Suspend / Resume modes:

Read or program another Sector during

Erase Suspend Mode

• Flexible Sector Architecture:

• triple-metal double-poly triple-well CMOS

- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte,

and seven 64 Kbyte sectors (byte mode)

- One 8 Kword, two 4 Kword, one 16 Kword

and seven 32 Kword sectors (word mode)

- Supports full chip erase

Flash Technology

• Low Vcc write inhibit < 2.5V

• >100K program/erase endurance cycle

• Package Options

- Individual sector erase supported

- Sector protection:

- 48-pin TSOP (Type 1)

Hardware locking of sectors to prevent

program or erase operations within individual

sectors

- 48-ball 6mm x 8mm FBGA

• Commercial and Industrial Temperature

Additionally, temporary Sector Group

Unprotect allows code changes in previously

locked sectors.

Range

GENERAL DESCRIPTION

The EN29LV400 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory,

organized as 524,288 bytes or 256,144 words. Any byte can be programmed typically in 8µs. The

EN29LV400 features 3.0V voltage read and write operation, with access times as fast as 45ns to

eliminate the need for WAIT states in high-performance microprocessor systems.

The EN29LV400 has separate Output Enable (

), Chip Enable (

), and Write Enable (WE)

controls, which eliminate bus contention issues. This device is designed to allow either single

Sector or full chip erase operation, where each Sector can be individually protected against

program/erase operations or temporarily unprotected to erase or program. The device can sustain a

minimum of 100K program/erase cycles on each Sector.

This Data Sheet may be revised by subsequent versions

or modifications due to changes in technical specifications.

Rev. C, Issue Date: 2004/03/18

12 3 4 5 6 7...42

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与EN29LV400T-55RBCP相关器件

型号	品牌	获取价格	描述	数据表
EN29LV512	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-45RJC	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-45RJCP	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-45RJI	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-45RJIP	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-45RSC	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-45RSCP	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-45RSI	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-45RSIP	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
EN29LV512-45RTC	EON	获取价格	512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory

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