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EN29LV400T-55RBCP PDF预览

EN29LV400T-55RBCP

更新时间: 2024-02-18 10:16:54
品牌 Logo 应用领域
晶豪 - ESMT 内存集成电路
页数 文件大小 规格书
42页 318K
描述
Flash, 256KX16, 55ns, PBGA48, FBGA-48

EN29LV400T-55RBCP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:TFBGA, BGA48,6X8,32Reach Compliance Code:unknown
风险等级:5.57最长访问时间:55 ns
备用内存宽度:8启动块:TOP
命令用户界面:YES数据轮询:YES
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PBGA-B48
长度:8 mm内存密度:4194304 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:1,2,1,7
端子数量:48字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:256KX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装等效代码:BGA48,6X8,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行:PARALLEL电源:3.3 V
编程电压:3.3 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.1 mm
部门规模:16K,8K,32K,64K最大待机电流:0.000005 A
子类别:Flash Memories最大压摆率:0.03 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM切换位:YES
类型:NOR TYPE宽度:6 mm
Base Number Matches:1

EN29LV400T-55RBCP 数据手册

 浏览型号EN29LV400T-55RBCP的Datasheet PDF文件第2页浏览型号EN29LV400T-55RBCP的Datasheet PDF文件第3页浏览型号EN29LV400T-55RBCP的Datasheet PDF文件第4页浏览型号EN29LV400T-55RBCP的Datasheet PDF文件第5页浏览型号EN29LV400T-55RBCP的Datasheet PDF文件第6页浏览型号EN29LV400T-55RBCP的Datasheet PDF文件第7页 
EN29LV400  
EN29LV400  
4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory  
Boot Sector Flash Memory, CMOS 3.0 Volt-only  
FEATURES  
3V, single power supply operation  
High performance program/erase speed  
- Byte/Word program time: 8µs typical  
- Sector erase time: 500ms typical  
- Full voltage range: 2.7-3.6 volt read and write  
operations for battery-powered applications.  
- Regulated voltage range: 3.0-3.6 volt read  
and write operations and for compatibility with  
high performance 3.3 volt microprocessors.  
JEDEC Standard program and erase  
commands  
JEDEC standard  
bits feature  
polling and toggle  
DATA  
High performance  
- Access times as fast as 45 ns  
Single Sector and Chip Erase  
Sector Unprotect Mode  
Low power consumption (typical values at 5  
MHz)  
- 7 mA typical active read current  
- 15 mA typical program/erase current  
- 1 µA typical standby current (standard access  
time to active mode)  
Embedded Erase and Program Algorithms  
Erase Suspend / Resume modes:  
Read or program another Sector during  
Erase Suspend Mode  
Flexible Sector Architecture:  
triple-metal double-poly triple-well CMOS  
- One 16 Kbyte, two 8 Kbyte, one 32 Kbyte,  
and seven 64 Kbyte sectors (byte mode)  
- One 8 Kword, two 4 Kword, one 16 Kword  
and seven 32 Kword sectors (word mode)  
- Supports full chip erase  
Flash Technology  
Low Vcc write inhibit < 2.5V  
>100K program/erase endurance cycle  
Package Options  
- Individual sector erase supported  
- Sector protection:  
- 48-pin TSOP (Type 1)  
Hardware locking of sectors to prevent  
program or erase operations within individual  
sectors  
- 48-ball 6mm x 8mm FBGA  
Commercial and Industrial Temperature  
Additionally, temporary Sector Group  
Unprotect allows code changes in previously  
locked sectors.  
Range  
GENERAL DESCRIPTION  
The EN29LV400 is a 4-Megabit, electrically erasable, read/write non-volatile flash memory,  
organized as 524,288 bytes or 256,144 words. Any byte can be programmed typically in 8µs. The  
EN29LV400 features 3.0V voltage read and write operation, with access times as fast as 45ns to  
eliminate the need for WAIT states in high-performance microprocessor systems.  
The EN29LV400 has separate Output Enable (  
), Chip Enable (  
), and Write Enable (WE)  
CE  
OE  
controls, which eliminate bus contention issues. This device is designed to allow either single  
Sector or full chip erase operation, where each Sector can be individually protected against  
program/erase operations or temporarily unprotected to erase or program. The device can sustain a  
minimum of 100K program/erase cycles on each Sector.  
This Data Sheet may be revised by subsequent versions  
or modifications due to changes in technical specifications.  
©2004 Eon Silicon Solution, Inc., www.essi.com.tw  
Rev. C, Issue Date: 2004/03/18  
1

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