5秒后页面跳转
M12L64164A-5BG2M PDF预览

M12L64164A-5BG2M

更新时间: 2024-01-18 23:10:46
品牌 Logo 应用领域
晶豪 - ESMT 动态存储器内存集成电路
页数 文件大小 规格书
45页 1255K
描述
Synchronous DRAM, 4MX16, 4.5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, VBGA-54

M12L64164A-5BG2M 技术参数

生命周期:Contact Manufacturer包装说明:VFBGA,
Reach Compliance Code:unknown风险等级:5.57
访问模式:FOUR BANK PAGE BURST最长访问时间:4.5 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:S-PBGA-B54
长度:8 mm内存密度:67108864 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:16
功能数量:1端口数量:1
端子数量:54字数:4194304 words
字数代码:4000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:4MX16封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装形状:SQUARE
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH座面最大高度:1 mm
自我刷新:YES最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
宽度:8 mmBase Number Matches:1

M12L64164A-5BG2M 数据手册

 浏览型号M12L64164A-5BG2M的Datasheet PDF文件第2页浏览型号M12L64164A-5BG2M的Datasheet PDF文件第3页浏览型号M12L64164A-5BG2M的Datasheet PDF文件第4页浏览型号M12L64164A-5BG2M的Datasheet PDF文件第5页浏览型号M12L64164A-5BG2M的Datasheet PDF文件第6页浏览型号M12L64164A-5BG2M的Datasheet PDF文件第7页 
ESMT  
M12L64164A (2M)  
1M x 16 Bit x 4 Banks  
Synchronous DRAM  
SDRAM  
FEATURES  
ORDERING INFORMATION  
y
y
y
y
JEDEC standard 3.3V power supply  
LVTTL compatible with multiplexed address  
Four banks operation  
MRS cycle with address key programs  
- CAS Latency (2 & 3)  
- Burst Length (1, 2, 4, 8 & full page)  
- Burst Type (Sequential & Interleave)  
All inputs are sampled at the positive going edge of the  
system clock  
DQM for masking  
Auto & self refresh  
64ms refresh period (4K cycle)  
- 15.6 μ s refresh interval  
Max Freq.  
Product ID  
Package Comments  
M12L64164A-5TG2M 200MHz 54 TSOP II  
M12L64164A-6TG2M 166MHz 54 TSOP II  
M12L64164A-7TG2M 143MHz 54 TSOP II  
Pb-free  
Pb-free  
Pb-free  
Pb-free  
Pb-free  
Pb-free  
y
M12L64164A-5BG2M 200MHz  
M12L64164A-6BG2M 166MHz  
M12L64164A-7BG2M 143MHz  
54 VBGA  
54 VBGA  
54 VBGA  
y
y
y
GENERAL DESCRIPTION  
The M12L64164A is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by  
16 bits. Synchronous design allows precise cycle controls with the use of system clock I/O transactions are possible on  
every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same  
device to be useful for a variety of high bandwidth, high performance memory system applications.  
PIN CONFIGURATION (TOP VIEW)  
BALL CONFIGURATION (TOP VIEW)  
(TSOPII 54L, 400milX875mil Body, 0.8mm Pin Pitch )  
(BGA54, 8mmX8mmX1mm Body, 0.8mm Ball Pitch)  
5 4  
5 3  
5 2  
5 1  
5 0  
4 9  
4 8  
4 7  
4 6  
4 5  
4 4  
4 3  
4 2  
4 1  
4 0  
3 9  
3 8  
3 7  
3 6  
3 5  
3 4  
3 3  
3 2  
3 1  
3 0  
2 9  
2 8  
1
2
3
4
5
6
7
8
9
VSS  
1
VDD  
DQ0  
VDDQ  
DQ1  
DQ2  
VSSQ  
DQ3  
DQ4  
VDDQ  
DQ5  
DQ6  
VSSQ  
DQ7  
VDD  
DQ15  
VS SQ  
DQ14  
DQ13  
VDDQ  
DQ12  
DQ11  
VS SQ  
DQ10  
DQ9  
VDDQ  
DQ8  
VS S  
2
VDDQ  
DQ15  
VSSQ  
DQ0  
VDD  
A
B
VSS  
3
4
5
VSSQ  
VDDQ  
DQ2  
DQ4  
DQ1  
DQ3  
DQ14  
DQ12  
DQ13  
DQ11  
VDDQ  
VSSQ  
6
7
C
D
E
F
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
VSSQ  
VDD  
VDDQ  
VSS  
DQ6  
DQ10  
DQ8  
DQ9  
NC  
DQ5  
DQ7  
LDQM  
NC  
LDQM  
WE  
UDQM  
NC  
CLK  
A11  
CKE  
A9  
CAS  
BA0  
RAS  
BA1  
WE  
CS  
UDQM  
CLK  
CKE  
NC  
CAS  
RAS  
CS  
G
H
J
A11  
BA0  
BA1  
A10/AP  
A0  
A8  
A10  
A7  
A5  
A6  
A4  
A0  
A3  
A1  
A2  
A9  
A8  
VSS  
VDD  
A7  
A6  
A1  
A5  
A2  
A4  
A3  
VS S  
VDD  
Elite Semiconductor Memory Technology Inc.  
Publication Date: Apr. 2012  
Revision: 1.6 1/45  

与M12L64164A-5BG2M相关器件

型号 品牌 获取价格 描述 数据表
M12L64164A-5BG2Y ESMT

获取价格

1M x 16 Bit x 4 Banks
M12L64164A-5BIG ESMT

获取价格

1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5BIG2M ESMT

获取价格

Synchronous DRAM, 4MX16, 4.5ns, CMOS, PBGA54, 8 X 8 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD F
M12L64164A-5TG ESMT

获取价格

1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5TG2M ESMT

获取价格

Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE
M12L64164A-5TG2Y ESMT

获取价格

1M x 16 Bit x 4 Banks
M12L64164A-5TIG ESMT

获取价格

1M x 16 Bit x 4 Banks Synchronous DRAM
M12L64164A-5TIG2M ESMT

获取价格

Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE
M12L64164A-5TIG2Y ESMT

获取价格

Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE,
M12L64164A-6BG ESMT

获取价格

1M x 16 Bit x 4 Banks Synchronous DRAM