Datasheet > PP4515BL

PP4515BL

更新时间： 2024-11-15 17:15:55

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	336K
描述
SOT-223

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中文翻译

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数据手册

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PP4515BL 数据手册

PP4515BL

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

SOT-223

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

150V

R_DS(ON)

I_D

5.5A

48mΩ

1. GATE

2. DRAIN

3. SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Gate-Source Voltage

SYMBOL

LIMITS

±20

UNITS

V_GS

T_A= 25 °C

T_A= 70 °C

5.5

Continuous Drain Current

I_D

4.4

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

L = 1mH

E_AS

T_A= 25 °C

T_A= 70 °C

3.5

Power Dissipation³

P_D

2.2

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL

MAXIMUM

UNITS

°C / W

Junction-to-Ambient²

t ≦10s

R_JA

Junction-to-Ambient²

Steady-State

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

³The Power dissipation is based on R_JAt ≦10s value.

ELECTRICAL CHARACTERISTICS (T_J= 25 °C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

UNIT

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

150

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

2.1

V_DS= 0V, V_GS= ±20V

±100 nA

V_DS= 150V, V_GS= 0V

Zero Gate Voltage Drain Current

I_DSS

A

V_DS= 150V, V_GS= 0V, T_J= 55 °C

REV1.1

N-34-3

12 3 4

中文翻译

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