Datasheet > PP4B10BK

PP4B10BK

更新时间： 2024-11-15 17:15:35

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
5页	255K
描述
PDFN 5x6

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中文翻译

获取价格

数据手册

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PP4B10BK 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

PP4B10BK

NIKO-SEM

PDFN 5x6P

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

100V

R_DS(ON)

I_D

127A

4.2mΩ

G. GATE

D. DRAIN

S. SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

100

±20

127

UNITS

Gate-Source Voltage

V_GS

T_C= 25 °C

Continuous Drain Current

Pulsed Drain Current¹

Continuous Drain Current

I_D

I_DM

I_D

T_C= 100 °C

218

T_A= 25 °C

T_A= 70 °C

Avalanche Current

Avalanche Energy

I_AS

L = 1mH

E_AS

162

150

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

Power Dissipation

Power Dissipation³

P_D

5.1

P_D

3.6

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 175

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

SYMBOL

TYPICAL MAXIMUM

UNITS

Junction-to-Ambient²

t ≦10s

R_JA

R_JC

Junction-to-Ambient²

°C / W

Steady-State

Junction-to-Case

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

³The Power dissipation is based on R_JAt ≦10s value.

L-24-4

REV 1.2

12 3 4 5

中文翻译

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