Datasheet > PP4B10AS

PP4B10AS

更新时间： 2024-11-15 17:15:27

品牌	Logo	应用领域
尼克森微 - NIKOSEM		/
页数	文件大小	规格书
4页	235K
描述
TO-263

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中文翻译

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数据手册

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PP4B10AS 数据手册

N-Channel Enhancement Mode

Field Effect Transistor

PP4B10AS

NIKO-SEM

TO-263

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

100V

R_DS(ON)

I_D

139A

4.4mΩ

1. GATE

2. DRAIN

3. SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 ° C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

100

UNITS

Gate-Source Voltage

V_GS

±20

T_C= 25 ° C

139

Continuous Drain Current

I_D

T_C= 100 ° C

Pulsed Drain Current¹

Avalanche Current

Avalanche Energy

I_DM

I_AS

350

L = 1mH

E_AS

392

T_C= 25 ° C

T_C= 100 ° C

187

Power Dissipation

P_D

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 175

° C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

Junction-to-Ambient

SYMBOL

TYPICAL

MAXIMUM

UNITS

° C / W

0.8

R_JC

R_JA

62.5

¹Pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS (T_J= 25 ° C, Unless Otherwise Noted)

LIMITS

MIN TYP MAX

PARAMETER

SYMBOL

TEST CONDITIONS

STATIC

UNITS

Drain-Source Breakdown Voltage

Gate Threshold Voltage

Gate-Body Leakage

V_(BR)DSS

V_GS(th)

I_GSS

100

V_GS= 0V, I_D= 250A

V_DS= V_GS, I_D= 250A

2.5

±100

V_DS= 0V, V_GS= ±20V

A

V_DS= 100V, V_GS= 0V

Zero Gate Voltage Drain Current

I_DSS

V_DS= 100V, V_GS= 0V, T_J= 125 ° C

100

K-50-2

REV 1.0

12 3 4

中文翻译

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