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PP4B10BD PDF预览

PP4B10BD

更新时间: 2024-11-15 17:15:51
品牌 Logo 应用领域
尼克森微 - NIKOSEM /
页数 文件大小 规格书
4页 189K
描述
TO-252

PP4B10BD 数据手册

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N-Channel Logic Level Enhancement  
Mode Field Effect Transistor  
PP4B10BD  
NIKO-SEM  
TO-252  
Halogen-Free & Lead-Free  
D
PRODUCT SUMMARY  
V(BR)DSS  
100V  
RDS(ON)  
ID  
1.GATE  
2.DRAIN  
3.SOURCE  
4.2mΩ  
127A  
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Gate-Source Voltage  
SYMBOL  
LIMITS  
±20  
UNITS  
VGS  
V
TC = 25 °C  
127  
Continuous Drain Current  
ID  
TC = 100 °C  
90  
A
Pulsed Drain Current1  
Avalanche Current  
Avalanche Energy  
IDM  
IAS  
370  
20  
L = 1mH  
EAS  
200  
mJ  
W
TC = 25 °C  
TC = 100 °C  
150  
Power Dissipation  
PD  
75  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 175  
°C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
Junction-to-Case  
SYMBOL  
TYPICAL  
MAXIMUM  
UNITS  
1
°C / W  
°C / W  
RJC  
RJA  
Junction-to-Ambient  
62.5  
1Pulse width limited by maximum junction temperature.  
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)  
LIMITS  
UNIT  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
STATIC  
MIN TYP MAX  
Drain-Source Breakdown Voltage  
Gate Threshold Voltage  
Gate-Body Leakage  
V(BR)DSS  
VGS(th)  
IGSS  
100  
VGS = 0V, ID = 250A  
VDS = VGS, ID = 250A  
V
1
1.7  
3
VDS = 0V, VGS = ±20V  
±100 nA  
VDS = 100V, VGS = 0V  
1
A  
10  
Zero Gate Voltage Drain Current  
IDSS  
VDS = 100V, VGS = 0V, TJ = 55 °C  
L-24-4  
REV 1.2  
1

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