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PP4B10BF

更新时间: 2024-11-15 17:15:23
品牌 Logo 应用领域
尼克森微 - NIKOSEM /
页数 文件大小 规格书
4页 189K
描述
TO-220F

PP4B10BF 数据手册

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N-Channel Enhancement Mode  
Field Effect Transistor  
PP4B10BF  
NIKO-SEM  
TO-220F  
Halogen-Free & Lead-Free  
D
PRODUCT SUMMARY  
V(BR)DSS  
100V  
RDS(ON)  
ID  
1. GATE  
2. DRAIN  
3. SOURCE  
G
78A  
4.4mΩ  
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Drain-Source Voltage  
SYMBOL  
VDS  
LIMITS  
100  
UNITS  
V
V
Gate-Source Voltage  
VGS  
±20  
TC = 25 °C  
78  
Continuous Drain Current  
ID  
TC = 100 °C  
55  
A
Pulsed Drain Current1  
Avalanche Current  
Avalanche Energy  
IDM  
IAS  
230  
17  
L = 1mH  
EAS  
145  
mJ  
W
TC = 25 °C  
TC = 100 °C  
60  
Power Dissipation  
PD  
30  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 175  
°C  
THERMAL RESISTANCE RATINGS  
THERMAL RESISTANCE  
SYMBOL  
TYPICAL MAXIMUM  
UNITS  
°C / W  
Junction-to-Ambient  
Junction-to-Case  
62.5  
2.5  
Steady-State  
Steady-State  
RJA  
RJC  
1Pulse width limited by maximum junction temperature.  
L-24-4  
REV 1.2  
1

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