Datasheet > PNZ115(PN115)

PNZ115(PN115)

更新时间： 2024-11-20 23:28:59

品牌	Logo	应用领域
其他 - ETC		晶体光电晶体管光电晶体管
页数	文件大小	规格书
3页	54K
描述
PNZ115 (PN115) - Silicon NPN Phototransistor

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中文翻译

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PNZ115(PN115) 数据手册

Phototransistors

PNZ115 (PN115)

Silicon NPN Phototransistor

Unit : mm

4.5±0.3

4.2±0.3

For optical control systems

ø3.5±0.2

2.3 1.9

Features

High sensitivity

Wide directional sensitivity, matched to GaAs LEDs : θ = 35 deg.

(typ.)

3-0.45±0.2

0.45±0.2

Fast response : t_r= 5 µs (typ.)

Side-view type package

1.27

2 3

1.27

1.2

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Symbol

V_CEO

V_CBO

V_ECO

V_EBO

I_C

Ratings

Unit

1: Emitter

2: Collector

3: Base

Collector to emitter voltage

Collector to base voltage

Emitter to collector voltage

Emitter to base voltage

Collector current

˚C

Collector power dissipation

Operating ambient temperature

Storage temperature

P_C

100

T_opr

–25 to +85

–30 to +100

T_stg

Photo-

detectors

Electro-Optical Characteristics (Ta = 25˚C)

Parameter

Dark current

Symbol

I_CEO

I_CE(L)

λ_P

Conditions

min

typ

0.02

4.5

900

max

Unit

µA

deg.

µs

V_CE= 10V

Collector photo current

Peak sensitivity wavelength

Acceptance half angle

Rise time

V_CE= 10V, L = 100 lx^*1

2.0

V_CE= 10V

t_r^*2

t_f^*2

Measured from the optical axis to the half power point

V_CC= 10V, I_CE(L)= 5mA

R_L= 100Ω

Fall time

µs

Collector saturation voltage V_CE(sat)I_CE(L)= 1mA, L = 1000 lx^*1

0.3

0.6

^*1Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.

^*2Switching time measurement circuit

Sig.IN

V_CC

t_d: Delay time

(Input pulse)

t_r: Rise time (Time required for the collector photo current to

increase from 10% to 90% of its final value)

90%

10%

Sig.OUT

(Output pulse)

t_d

t_f: Fall time (Time required for the collector photo current to

decrease from 90% to 10% of its initial value)

50Ω

R_L

t_r

t_f

Note) The part number in the parenthesis shows conventional part number.

12 3

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