Datasheet > PMN120ENEA

PMN120ENEA

更新时间： 2024-11-06 11:09:43

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	272K
描述
60 V, N-channel Trench MOSFETProduction

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PMN120ENEA 数据手册

PMN120ENEA

60 V, N-channel Trench MOSFET

29 April 2019

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-

Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•

Logic-level compatible

•

Extended temperature range T_j= 175 °C

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2)

AEC-Q101 qualified

3. Applications

•

Relay driver

High-speed line driver

Low-side load switch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-20

I_D

V_GS= 10 V; T_amb= 25 °C

[1]

2.5

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 2.5 A; T_j= 25 °C

123

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm².

12 3 4 5 6 7...15

中文翻译

下载PDF

与PMN120ENEA相关器件

型号	品牌	获取价格	描述	数据表
PMN15ENE	NEXPERIA	获取价格	30 V, N-channel Trench MOSFETProduction
PMN16XNE	NXP	获取价格	SMALL SIGNAL, FET
PMN16XNE	NEXPERIA	获取价格	20 V, N-channel Trench MOSFETProduction
PMN16XNEX	ETC	获取价格	MOSFET N-CH 20V SC-74
PMN20EN	NXP	获取价格	30 V, 6.7 A N-channel Trench MOSFET
PMN20EN,115	NXP	获取价格	PMN20EN - 30 V, 6.7 A N-channel Trench MOSFET TSOP 6-Pin
PMN20ENA	NEXPERIA	获取价格	40 V, N-channel Trench MOSFETProduction
PMN230ENEA	NEXPERIA	获取价格	60 V, N-channel Trench MOSFETProduction
PMN23UN	NXP	获取价格	UTrenchMOS ultra low level FET
PMN23UN,135	NXP	获取价格	N-channel TrenchMOS ultra low level FET TSOP 6-Pin