Datasheet > PMDPB65UP,115

PMDPB65UP,115

更新时间： 2024-11-05 21:18:03

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	205K
描述
PMDPB65UP - 20 V, 3.5 A dual P-channel Trench MOSFET DFN 6-Pin

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中文翻译

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技术参数
数据手册
替代型号

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PMDPB65UP,115 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	DFN	针数：	6
Reach Compliance Code：	unknown	风险等级：	5.57
Base Number Matches：	1

PMDPB65UP,115 数据手册

PMDPB65UP

20 V, 3.5 A dual P-channel Trench MOSFET

Rev. 2 — 8 March 2011

Product data sheet

1. Product profile

1.1 General description

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small

and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using

Trench MOSFET technology.

1.2 Features and benefits

 Trench MOSFET technology

 Small and leadless ultra thin SMD

plastic package: 2 × 2 × 0.65 mm

 1.8 V R_DSonrated for low voltage gate

drive

 Exposed drain pad for excellent

thermal conduction

 1 kV ElectroStatic Discharge (ESD)

protection

1.3 Applications

 Charging switch for portable devices

 DC-to-DC converters

 Power management in battery-driven

portables

 Hard disk and computing power

 Small brushless DC motor drive

management

1.4 Quick reference data

Table 1.

Symbol

Quick reference data

Parameter Conditions

Min Typ Max Unit

Per transistor

V_DS

V_GS

I_D

drain-source

voltage

T_amb= 25 °C

-20

gate-source

voltage

-8

[1]

drain current

V_GS= -4.5 V; T_amb= 25 °C

-3.5

Static characteristics (per transistor)

R_DSon

drain-source

on-state

resistance

V_GS= -4.5 V; I_D= -1 A;

t_p≤ 300 µs; δ ≤ 0.01 ;

T_j= 25 °C

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 6 cm².

12 3 4 5 6 7...15

中文翻译

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PMDPB65UP,115 替代型号

型号	品牌	替代类型	描述	数据表
PMDPB58UPE,115	NXP	类似代替	20 V dual P-channel Trench MOSFET DFN 6-Pin
FDMA6023PZT	FAIRCHILD	功能相似	Dual P-Channel PowerTrench? MOSFET -20 V, -3.
FDMA1023PZ	FAIRCHILD	功能相似	Dual P-Channel PowerTrench MOSFET -20V, -3.7A, 72mohm

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