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PMBTA92 PDF预览

PMBTA92

更新时间: 2024-11-05 11:15:51
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管晶体管
页数 文件大小 规格书
7页 788K
描述
PNP high-voltage transistorProduction

PMBTA92 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
风险等级:5.7Is Samacsys:N
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:300 V
配置:SINGLE最小直流电流增益 (hFE):25
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

PMBTA92 数据手册

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PMBTA92  
PNP high-voltage transistor  
1 January 2023  
Product data sheet  
1. General description  
PNP high-voltage transistor in a small SOT23 Surface-Mounted Device (SMD) plastic package.  
NPN complement: PMBTA42  
2. Features and benefits  
Low current (max. 100 mA)  
High voltage (max. 300 V)  
3. Applications  
Telephony  
Professional communication equipment  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-300  
V
IC  
collector current  
DC current gain  
-
-
-
-100  
-
mA  
hFE  
VCE = -10 V; IC = -10 mA; pulsed; tp ≤  
300 µs; δ ≤ 0.02  
40  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
Description  
base  
Simplified outline  
Graphic symbol  
3
B
E
C
C
E
2
emitter  
3
collector  
B
1
2
sym132  
SOT23  
 
 
 
 
 

PMBTA92 替代型号

型号 品牌 替代类型 描述 数据表
MMBTA92 NXP

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