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PMBTH81TRL PDF预览

PMBTH81TRL

更新时间: 2024-11-04 15:48:07
品牌 Logo 应用领域
国巨 - YAGEO 放大器光电二极管晶体管
页数 文件大小 规格书
2页 179K
描述
RF Small Signal Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN

PMBTH81TRL 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.77集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):60
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):0.6 MHzBase Number Matches:1

PMBTH81TRL 数据手册

 浏览型号PMBTH81TRL的Datasheet PDF文件第2页 

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