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PMBZ5226BT/R PDF预览

PMBZ5226BT/R

更新时间: 2024-02-19 00:03:04
品牌 Logo 应用领域
恩智浦 - NXP 稳压二极管
页数 文件大小 规格书
12页 70K
描述
DIODE 3.3 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB, PLASTIC, SMD, 3 PIN, Voltage Regulator Diode

PMBZ5226BT/R 技术参数

生命周期:Obsolete包装说明:R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.29
配置:SINGLE二极管元件材料:SILICON
二极管类型:ZENER DIODEJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3膝阻抗最大值:1600 Ω
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
最大功率耗散:0.25 W认证状态:Not Qualified
标称参考电压:3.3 V最大反向电流:25 µA
表面贴装:YES技术:ZENER
端子形式:GULL WING端子位置:DUAL
电压温度Coeff-Max:最大电压容差:5%
工作测试电流:20 mABase Number Matches:1

PMBZ5226BT/R 数据手册

 浏览型号PMBZ5226BT/R的Datasheet PDF文件第2页浏览型号PMBZ5226BT/R的Datasheet PDF文件第3页浏览型号PMBZ5226BT/R的Datasheet PDF文件第4页浏览型号PMBZ5226BT/R的Datasheet PDF文件第5页浏览型号PMBZ5226BT/R的Datasheet PDF文件第6页浏览型号PMBZ5226BT/R的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
PMBZ5226B to PMBZ5257B  
Voltage regulator diodes  
1999 May 17  
Product specification  
Supersedes data of 1996 Apr 26  

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