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PMBF170,215 PDF预览

PMBF170,215

更新时间: 2023-01-02 15:20:32
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
13页 277K
描述
PMBF170 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin

PMBF170,215 技术参数

生命周期:Active零件包装代码:TO-236
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:0.5
其他特性:LOGIC LEVEL COMPATIBLE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):0.3 A
最大漏源导通电阻:5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):10 pFJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PMBF170,215 数据手册

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PMBF170  
N-channel enhancement mode field-effect transistor  
Rev. 03 — 23 June 2000  
Product specification  
1. Description  
N-channel enhancement mode field-effect transistor in a plastic package using  
TrenchMOS™1 technology.  
Product availability:  
PMBF170 in SOT23.  
2. Features  
TrenchMOS™ technology  
Very fast switching  
Logic level compatible  
Subminiature surface mount package.  
3. Applications  
Relay driver  
High speed line driver  
Logic level translator.  
c
c
4. Pinning information  
Table 1: Pinning - SOT23, simplified outline and symbol  
Pin  
1
Description  
gate (g)  
Simplified outline  
Symbol  
3
d
2
source (s)  
drain (d)  
3
g
03ab44  
03ab30  
s
1
2
SOT23  
N-channel MOSFET  
1. TrenchMOS is a trademark of Royal Philips Electronics.  

PMBF170,215 替代型号

型号 品牌 替代类型 描述 数据表
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