Datasheet > PMBF170,215

PMBF170,215

更新时间： 2024-11-16 04:27:15

品牌	Logo	应用领域
恩智浦 - NXP		开关光电二极管晶体管
页数	文件大小	规格书
13页	277K
描述
PMBF170 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin

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PMBF170,215 数据手册

PMBF170

N-channel enhancement mode ﬁeld-effect transistor

Rev. 03 — 23 June 2000

Product speciﬁcation

1. Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™¹technology.

Product availability:

PMBF170 in SOT23.

2. Features

■ TrenchMOS™ technology

■ Very fast switching

■ Logic level compatible

■ Subminiature surface mount package.

3. Applications

■ Relay driver

■ High speed line driver

■ Logic level translator.

4. Pinning information

Table 1: Pinning - SOT23, simpliﬁed outline and symbol

Description

gate (g)

Simpliﬁed outline

Symbol

source (s)

drain (d)

03ab44

03ab30

SOT23

N-channel MOSFET

1. TrenchMOS is a trademark of Royal Philips Electronics.

12 3 4 5 6 7...13

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型号	品牌	替代类型	描述	数据表
MMBF170LT1G	ONSEMI	功能相似	Power MOSFET 500 mA, 60 V

型号	品牌	获取价格	描述	数据表
PMBF170/T1	NXP	获取价格	300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3
PMBF170-T	NXP	获取价格	暂无描述
PMBF170T/R	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 60V V(BR)DSS \| 250MA I(D) \| TO-236
PMBF170-TAPE-13	NXP	获取价格	TRANSISTOR 250 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si
PMBF170TRL	NXP	获取价格	TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpos
PMBF170TRL13	NXP	获取价格	TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpos
PMBF174	NXP	获取价格	TRANSISTOR 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal
PMBF175	NXP	获取价格	TRANSISTOR 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal
PMBF176	NXP	获取价格	TRANSISTOR 30 V, P-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal
PMBF4391	NXP	获取价格	N-channel FETs