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PMBF170/T1 PDF预览

PMBF170/T1

更新时间: 2024-02-10 11:27:38
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
13页 277K
描述
300mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3

PMBF170/T1 技术参数

生命周期:Obsolete零件包装代码:SOT-23
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.07其他特性:LOGIC LEVEL COMPATIBLE
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):0.3 A最大漏源导通电阻:5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):10 pF
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PMBF170/T1 数据手册

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PMBF170  
N-channel enhancement mode field-effect transistor  
Rev. 03 — 23 June 2000  
Product specification  
1. Description  
N-channel enhancement mode field-effect transistor in a plastic package using  
TrenchMOS™1 technology.  
Product availability:  
PMBF170 in SOT23.  
2. Features  
TrenchMOS™ technology  
Very fast switching  
Logic level compatible  
Subminiature surface mount package.  
3. Applications  
Relay driver  
High speed line driver  
Logic level translator.  
c
c
4. Pinning information  
Table 1: Pinning - SOT23, simplified outline and symbol  
Pin  
1
Description  
gate (g)  
Simplified outline  
Symbol  
3
d
2
source (s)  
drain (d)  
3
g
03ab44  
03ab30  
s
1
2
SOT23  
N-channel MOSFET  
1. TrenchMOS is a trademark of Royal Philips Electronics.  

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