Datasheet > PMBF170TRL13

PMBF170TRL13

更新时间： 2024-11-15 20:06:19

品牌	Logo	应用领域
恩智浦 - NXP		开关光电二极管晶体管
页数	文件大小	规格书
13页	277K
描述
TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal

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PMBF170TRL13 技术参数

PMBF170

N-channel enhancement mode ﬁeld-effect transistor

Rev. 03 — 23 June 2000

Product speciﬁcation

1. Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™¹technology.

Product availability:

PMBF170 in SOT23.

2. Features

■ TrenchMOS™ technology

■ Very fast switching

■ Logic level compatible

■ Subminiature surface mount package.

3. Applications

■ Relay driver

■ High speed line driver

■ Logic level translator.

4. Pinning information

Table 1: Pinning - SOT23, simpliﬁed outline and symbol

Description

gate (g)

Simpliﬁed outline

Symbol

source (s)

drain (d)

03ab44

03ab30

SOT23

N-channel MOSFET

1. TrenchMOS is a trademark of Royal Philips Electronics.

12 3 4 5 6 7...13

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