Dual N-Channel Enhancement Mode
Field Effect Transistor
PK630HY
NIKO-SEM
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
4.9mΩ
7.8mΩ
ID
Q2
Q1
30V
30V
64A
40A
1 : G1
2,3,4 : D1
5,6,7 : S2
8 : G2
9 : S1/D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
SYMBOL
VDS
Q2
30
±20
64
40
150
21
17
35
61
37
15
4
Q1
30
±20
40
25
90
14
11
21
22
24
9.6
3.1
2
UNITS
V
V
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current3
Pulsed Drain Current1
Continuous Drain Current
ID
IDM
ID
TC = 100 °C
TA = 25 °C
TA = 70 °C
A
Avalanche Current
Avalanche Energy
IAS
L = 0.1mH
TC = 25 °C
TC = 100 °C
TA = 25 °C
TA = 70 °C
EAS
mJ
W
Power Dissipation
Power Dissipation4
PD
PD
W
2.6
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNITS
Q2
Q1
Q2
Q1
Q2
Q1
30
40
t ≦10s
RJA
Junction-to-Ambient2
56
Steady-State
RJA
°C / W
72
3.3
5.2
RJC
RJC
Junction-to-Case
1Pulse width limited by maximum junction temperature TJ(MAX)=150°C.
2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with TA =25°C. The value in any given application depends on the user's specific board design.
3Package limitation current :Q1=25A,Q2=25A
4The Power dissipation is based on RJA t ≦10s value.
N-27-2
REV 1.2
1