Datasheet > PK884DS

PK884DS

更新时间： 2024-11-12 17:15:23

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
9页	587K
描述
PDFN 5x6

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中文翻译

获取价格

数据手册

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PK884DS 数据手册

Dual N-Channel Enhancement Mode

Field Effect Transistor

PK884DS

NIKO-SEM

PDFN 5x6S

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

R_DS(ON)

2mΩ

5mΩ

I_D

30V

85A

53A

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

• Optimized Gate Charge to Minimize Switching Losses.

• 100% UIS and Rg Tested.

Applications

• Computing DC to DC converters.

• Communications DC to DC converters.

• General Purpose Point of load.

G: GATE

D: DRAIN

S: SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

UNITS

Gate-Source Voltage

V_GS

±20

T_C=25 °C

Continuous Drain Current³

Pulsed Drain Current¹

Continuous Drain Current

I_D

I_DM

I_D

T_C=100 °C

206

120

T_A=25 °C

T_A=70 °C

Avalanche Current

Avalanche Energy

I_AS

L=0.01mH

T_C=25 °C

T_C=100 °C

T_A=25 °C

T_A=70 °C

E_AS

16.8

Power Dissipation

Power Dissipation⁴

P_D

3.2

2.1

P_D

1.9

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

N-15-3

REV 1.1

12 3 4 5 6 7...9

中文翻译

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