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PK90GB80 PDF预览

PK90GB80

更新时间: 2024-11-17 21:54:47
品牌 Logo 应用领域
SANREX 栅极触发装置可控硅整流器
页数 文件大小 规格书
2页 133K
描述
Designed for various rectifier circuits and power controls

PK90GB80 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.72
Is Samacsys:N最大直流栅极触发电流:100 mA
最大直流栅极触发电压:3 V快速连接描述:0
螺丝端子的描述:0最大维持电流:50 mA
最大漏电流:15 mA通态非重复峰值电流:1100 A
最大通态电流:90000 A最高工作温度:125 °C
最低工作温度:-40 °C重复峰值反向电压:800 V
子类别:Silicon Controlled Rectifiers触发设备类型:SCR
Base Number Matches:1

PK90GB80 数据手册

 浏览型号PK90GB80的Datasheet PDF文件第2页 
THYRISTOR MODULE  
(
)
PD,PE,KK  
PK  
90GB  
UL;E76102M)  
Power Thyristor/Diode Module PK90GB series are designed for various rectifier circuits  
and power controls. For your circuit application. following internal connections and wide  
voltage ratings up to 800V are available. and electrically isolated mounting base make  
your mechanical design easy.  
93.5MAX  
80  
2- 6.5  
3
2
1
T(AV)  
T(RMS)  
TSM  
140A, I  
I
90A, I  
1800A  
Internal Configurations  
di/dt 200 A/μs  
dv/dt 500V/μs  
~
+
16.5  
23  
23  
3-M5  
K2  
G2  
K2  
G2  
Applications)  
3
2
1
110TAB  
K1G1  
(A2)�  
(K2)�  
3
2
1
A1K2  
K1  
(K2)�  
(A2)�  
A1K2  
Various rectifiers  
PK  
PE  
AC/DC motor drives  
Heater controls  
Light dimmers  
K2  
2
K2  
G2  
3
2
1
1
1
K1G1  
(A2)�  
(K2)�  
A1K2  
K1G1  
(A2)�  
(A1)�  
Static switches  
Unit:  
A
PD  
KK  
Maximum Ratings  
Ratings  
Symbol  
Item  
Unit  
PK90GB40 PD90GB40  
KK90GB40 PE90GB40  
PK90GB80 PD90GB80  
KK90GB80 PE90GB80  
VRRM  
VRSM  
VDRM  
400  
480  
400  
800  
960  
800  
V
V
V
Repetitive Peak Reverse Voltage  
Non-Repetitive Peak Reverse Voltage  
Non-Repetitive Peak Reverse Voltage  
Symbol  
Item  
Conditions  
Ratings  
Unit  
A
TAV)  
I
90  
Average On-State Current  
R.M.S. On-State Current  
Surge On-State Current  
Single phase, half wave, 180°conduction, Tc88℃  
TRMS)  
I
140  
A
Single phase, half wave, 180°conduction, Tc88℃  
1
TSM  
I
A
cycle, 50Hz/60Hz, peak Value, non-repetitive  
1650 1800  
/
2
2
2
2
I t  
Value for one cycle of surge current  
15000  
A S  
I t  
GM  
P
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Current  
10  
W
W
A
GAV)  
P
3
FGM  
I
3
10  
FGM  
V
Peak Gate Voltage (Forward)  
Peak Gate Voltage (Reverse)  
Critical Rate of Rise of On-State Current  
V
RGM  
V
5
V
1
G
D
DRM  
G
200  
didt  
I 100mATj25V =  
V
dI dt0.1A μs  
A μs  
/
/
/
2
ISO  
V
A.C.1minute  
2500  
V
Isolation Breakdown Voltage (R.M.S.)  
Operating Junction Temperature  
Tj  
40 to +125  
40 to +125  
4.748)  
2.728)  
170  
Tstg  
Storage Temperature  
MountingM6Recommended Value 2.5-3.925-40)  
TerminalM5Recommended Value 1.5-2.515-25)  
Mounting  
Torque  
N・m  
(㎏fB)  
g
Mass  
Electrical Characteristics  
Symbol  
Item  
Conditions  
Ratings  
15  
Unit  
mA  
mA  
V
DRM  
I
Repetitive Peak Off-State Current, max.  
Repetitive Peak Reverse Current, max.  
Peak On-State Voltage, max.  
Gate Trigger Current/Voltage, max.  
Non-Trigger Gate, Voltage. min.  
Turn On Time, max.  
DRM  
DRM  
at V  
at V  
, single phase, half wave, Tj125℃  
RRM  
I
15  
, single phase, half wave, Tj125℃  
TM  
V
1.30  
On-State Current 270A, Tj125Inst. measurement  
GT  
GT  
T
D
I
V  
Tj25℃,I 1AV 6V  
100 3  
mA V  
/
/
1
GD  
V
D
DRM  
0.25  
10  
V
Tj125℃,V =/V  
2
1
tgt  
T
G
D
DRM  
G
/
I 90AI 100mATj25V =  
2V dI dt0.1A μs  
μs  
/
2
Critical Rate of Rise of Off-State Voltage, min.  
Holding Current, typ.  
D
DRM  
500  
50  
dvdt  
Tj125, V =/V  
, Exponential wave.  
V μs  
/
3
H
I
mA  
mA  
Tj25℃  
L
I
Lutching Current, typ.  
100  
0.30  
Tj25℃  
Junction to case  
Rthj-c)*Thermal Impedance, max.  
W  
/
markThyristor and Diode part. No markThyristor part  
23  

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