THYRISTOR MODULE
(
)
PD,PE,KK
PK
90F
UL:E76102(M)
Power Thyristor/Diode Module PK90F series are designed for various rectifier circuits
and power controls. For your circuit application. following internal connections and wide
voltage ratings up to 1,600V are available. High precision 25mm (1inch) width package
and electrically isolated mounting base make your mechanical design easy.
92
20
17.5
20
20
2-
6
●
T(AV)
I
T(RMS)
90A, I
TSM
140A, I
2300A
● di/dt 200 A/μs
● dv/dt 500V/μs
2.8
�
M5X10
K2
G2
K2
G2
#110TAB
(Applications)
Various rectifiers
3
2
1
K1G1
(A2)�
(K2)�
3
2
1
A1K2
K1
(K2)�
(A2)�
A1K2
PK
PE
AC/DC motor drives
Heater controls
Light dimmers
80±0.2
K2
2
K2
G2
3
2
1
1
1
K1G1
(A2)�
(K2)�
K1G1
(A2)�
A1K2
(A1)�
Static switches
PD
KK
Unit:
A
■Maximum Ratings
Ratings
PK90F40
PD90F40
PE90F40
KK90F40
PK90F80
PD90F80
PE90F80
KK90F80
PK90F120
PD90F120
PE90F120
PK90F160
PD90F160
PE90F160
KK90F160
Symbol
Item
Unit
KK90F120
RRM
V
400
480
400
800
960
800
1200
1300
1200
1600
1700
1600
V
V
V
*
*
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
RSM
V
DRM
V
Symbol
T(AV)
I
Item
Conditions
Ratings
90
Unit
A
*Average On-State Current
*R.M.S. On-State Current
*Surge On-State Current
Single phase, half wave, 180°conduction, Tc:93℃
Single phase, half wave, 180°conduction, Tc:93℃
/cycle, 50Hz/60Hz, peak Value, non-repetitive
Value for one cycle of surge current
T(RMS)
I
140
A
1
TSM
I
A
2100 2300
/
2
2
2
2
I t
22000
A S
*I t
GM
P
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
10
W
W
A
G(AV)
P
3
FGM
I
3
10
FGM
V
Peak Gate Voltage (Forward)
Peak Gate Voltage (Reverse)
Critical Rate of Rise of On-State Current
V
RGM
V
5
V
1
G
D
DRM
G
200
di/dt
I =100mA,Tj=25℃,V =
/
2V ,dI dt=0.1A μs
A μs
/
/
/
ISO
V
A.C.1minute
2500
V
℃
℃
*
*
Isolation Breakdown Voltage (R.M.S.)
Operating Junction Temperature
Tj
-40 to +125
-40 to +125
2.7(28)
2.7(28)
170
Tstg
*Storage Temperature
Mounting(M5) Recommended Value 1.5-2.5(15-25)
Terminal(M5) Recommended Value 1.5-2.5(15-25)
Mounting
Torque
N・m
(㎏f・B)
g
Mass
■Electrical Characteristics
Symbol
DRM
I
Item
Conditions
at V , single phase, half wave, Tj=125℃
at V , single phase, half wave, Tj=125℃
On-State Current 285A, Tj=25℃ Inst. measurement
Ratings
20
Unit
mA
mA
V
Repetitive Peak Off-State Current, max.
Repetitive Peak Reverse Current, max.
Peak On-State Voltage, max.
Gate Trigger Current/Voltage, max.
Non-Trigger Gate, Voltage. min.
Turn On Time, max.
DRM
DRM
RRM
I
20
*
*
TM
V
1.40
GT
GT
T
D
I /V
Tj=25℃,I =1A,V =6V
100 3
mA V
/
/
1
GD
V
D
DRM
0.25
10
V
Tj=125℃,V =/V
I =90A,I =100mA,Tj=25℃,V =
Tj=125℃, V =/V , Exponential wave.
2
1
tgt
T
G
D
DRM
G
/
2V ,dI dt=0.1A μs
μs
/
/
2
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
D
DRM
500
50
dv/dt
V μs
/
3
H
I
mA
mA
Tj=25℃
Tj=25℃
Junction to case
L
I
Lutching Current, typ.
100
0.27
Rth(j-c)*Thermal Impedance, max.
℃ W
/
*mark:Thyristor and Diode part. No mark:Thyristor part
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com