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PK90F80 PDF预览

PK90F80

更新时间: 2024-11-05 22:07:23
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THYRISTOR MODULE

PK90F80 数据手册

 浏览型号PK90F80的Datasheet PDF文件第2页 
THYRISTOR MODULE  
(
)
PD,PE,KK  
PK  
90F  
UL:E76102M)  
Power Thyristor/Diode Module PK90F series are designed for various rectifier circuits  
and power controls. For your circuit application. following internal connections and wide  
voltage ratings up to 1,600V are available. High precision 25mm (1inch) width package  
and electrically isolated mounting base make your mechanical design easy.  
92  
20  
17.5  
20  
20  
2-  
6
T(AV)  
I
T(RMS)  
90A, I  
TSM  
140A, I  
2300A  
di/dt 200 A/μs  
dv/dt 500V/μs  
2.8  
M5X10  
K2  
G2  
K2  
G2  
#110TAB  
Applications)  
Various rectifiers  
3
2
1
K1G1  
(A2)�  
(K2)�  
3
2
1
A1K2  
K1  
(K2)�  
(A2)�  
A1K2  
PK  
PE  
AC/DC motor drives  
Heater controls  
Light dimmers  
80±0.2  
K2  
2
K2  
G2  
3
2
1
1
1
K1G1  
(A2)�  
(K2)�  
K1G1  
(A2)�  
A1K2  
(A1)�  
Static switches  
PD  
KK  
Unit:  
A
Maximum Ratings  
Ratings  
PK90F40  
PD90F40  
PE90F40  
KK90F40  
PK90F80  
PD90F80  
PE90F80  
KK90F80  
PK90F120  
PD90F120  
PE90F120  
PK90F160  
PD90F160  
PE90F160  
KK90F160  
Symbol  
Item  
Unit  
KK90F120  
RRM  
V
400  
480  
400  
800  
960  
800  
1200  
1300  
1200  
1600  
1700  
1600  
V
V
V
Repetitive Peak Reverse Voltage  
Non-Repetitive Peak Reverse Voltage  
Repetitive Peak Off-State Voltage  
RSM  
V
DRM  
V
Symbol  
TAV)  
I
Item  
Conditions  
Ratings  
90  
Unit  
A
Average On-State Current  
*R.M.S. On-State Current  
Surge On-State Current  
Single phase, half wave, 180°conduction, Tc93℃  
Single phase, half wave, 180°conduction, Tc93℃  
cycle, 50Hz/60Hz, peak Value, non-repetitive  
Value for one cycle of surge current  
TRMS)  
I
140  
A
1
TSM  
I
A
2100 2300  
/
2
2
2
2
I t  
22000  
A S  
I t  
GM  
P
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Current  
10  
W
W
A
GAV)  
P
3
FGM  
I
3
10  
FGM  
V
Peak Gate Voltage (Forward)  
Peak Gate Voltage (Reverse)  
Critical Rate of Rise of On-State Current  
V
RGM  
V
5
V
1
G
D
DRM  
G
200  
didt  
I 100mATj25V =  
2V dI dt0.1A μs  
A μs  
/
/
/
ISO  
V
A.C.1minute  
2500  
V
Isolation Breakdown Voltage (R.M.S.)  
Operating Junction Temperature  
Tj  
40 to 125  
40 to 125  
2.728)  
2.728)  
170  
Tstg  
Storage Temperature  
MountingM5Recommended Value 1.5-2.515-25)  
TerminalM5Recommended Value 1.5-2.515-25)  
Mounting  
Torque  
N・m  
(㎏fB)  
g
Mass  
Electrical Characteristics  
Symbol  
DRM  
I
Item  
Conditions  
at V , single phase, half wave, Tj125℃  
at V , single phase, half wave, Tj125℃  
On-State Current 285A, Tj25Inst. measurement  
Ratings  
20  
Unit  
mA  
mA  
V
Repetitive Peak Off-State Current, max.  
Repetitive Peak Reverse Current, max.  
Peak On-State Voltage, max.  
Gate Trigger Current/Voltage, max.  
Non-Trigger Gate, Voltage. min.  
Turn On Time, max.  
DRM  
DRM  
RRM  
I
20  
TM  
V
1.40  
GT  
GT  
T
D
I V  
Tj25℃,I 1AV 6V  
100 3  
mA V  
/
/
1
GD  
V
D
DRM  
0.25  
10  
V
Tj125℃,V =/V  
I 90AI 100mATj25V =  
Tj125, V =/V , Exponential wave.  
2
1
tgt  
T
G
D
DRM  
G
2V dI dt0.1A μs  
μs  
/
/
2
Critical Rate of Rise of Off-State Voltage, min.  
Holding Current, typ.  
D
DRM  
500  
50  
dvdt  
V μs  
/
3
H
I
mA  
mA  
Tj25℃  
Tj25℃  
Junction to case  
L
I
Lutching Current, typ.  
100  
0.27  
Rthj-c)*Thermal Impedance, max.  
W  
/
markThyristor and Diode part. No markThyristor part  
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com  

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THYRISTOR MODULE|SCR DOUBLER|1.6KV V(RRM)|90A I(T)