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PK90HB120 PDF预览

PK90HB120

更新时间: 2024-11-05 22:07:31
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THYRISTOR MODULE

PK90HB120 数据手册

 浏览型号PK90HB120的Datasheet PDF文件第2页 
THYRISTOR MODULE  
(
)
PD,PE,KK  
PK  
90HB  
UL;E76102M)  
Power Thyristor/Diode Module PK90HB series are designed for various rectifier circuits  
and power controls. For your circuit application. following internal connections and wide  
voltage ratings up to 1,600V are available. and electrically isolated mounting base make  
your mechanical design easy.  
93.5MAX  
80  
2- 6.5  
3
2
1
T(AV)  
T(RMS)  
TSM  
140A, I  
I
90A, I  
1800A  
~
+
Internal Configurations  
di/dt 200 A/μs  
dv/dt 500V/μs  
16.5  
23  
23  
3-M5  
K2  
G2  
110TAB  
K2  
G2  
Applications)  
3
2
1
K1G1  
(A2)�  
(K2)�  
3
2
1
A1K2  
K1  
(K2)�  
(A2)�  
A1K2  
Various rectifiers  
PK  
PE  
AC/DC motor drives  
Heater controls  
Light dimmers  
K2  
2
K2  
G2  
3
2
1
1
1
K1G1  
(A2)�  
(K2)�  
A1K2  
K1G1  
(A2)�  
(A1)�  
Static switches  
Unit:  
A
PD  
KK  
Maximum Ratings  
Ratings  
Symbol  
Item  
Unit  
PK90HB120 PD90HB120  
KK90HB120 PE90HB120  
PK90HB120 PD90HB120  
KK90HB120 PE90HB120  
VRRM  
VRSM  
VDRM  
1200  
1350  
1200  
1600  
1700  
1600  
V
V
V
Repetitive Peak Reverse Voltage  
Non-Repetitive Peak Reverse Voltage  
Repetitive Peak Off-State Voltage  
Symbol  
Item  
Conditions  
Ratings  
Unit  
A
TAV)  
I
90  
Average On-State Current  
R.M.S. On-State Current  
Surge On-State Current  
Single phase, half wave, 180°conduction, Tc88℃  
TRMS)  
I
140  
A
Single phase, half wave, 180°conduction, Tc88℃  
1
TSM  
I
A
cycle, 50Hz/60Hz, peak Value, non-repetitive  
1650 1800  
/
2
2
2
2
I t  
Value for one cycle of surge current  
15000  
A S  
I t  
GM  
P
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Current  
10  
W
W
A
GAV)  
P
3
FGM  
I
3
10  
FGM  
V
Peak Gate Voltage (Forward)  
Peak Gate Voltage (Reverse)  
Critical Rate of Rise of On-State Current  
V
RGM  
V
5
V
1
G
D
DRM  
G
200  
didt  
I 100mATj25V =  
2V dI dt0.1A μs  
A μs  
/
/
/
ISO  
V
A.C.1minute  
2500  
V
Isolation Breakdown Voltage (R.M.S.)  
Operating Junction Temperature  
Tj  
40 to +125  
40 to +125  
4.748)  
2.728)  
170  
Tstg  
Storage Temperature  
MountingM6Recommended Value 2.5-3.925-40)  
TerminalM5Recommended Value 1.5-2.515-25)  
Mounting  
Torque  
N・m  
(㎏fB)  
g
Mass  
Electrical Characteristics  
Symbol  
Item  
Conditions  
at V , single phase, half wave, Tj125℃  
Ratings  
15  
Unit  
mA  
mA  
V
DRM  
I
Repetitive Peak Off-State Current, max.  
Repetitive Peak Reverse Current, max.  
Peak On-State Voltage, max.  
Gate Trigger Current/Voltage, max.  
Non-Trigger Gate, Voltage. min.  
Turn On Time, max.  
DRM  
DRM  
RRM  
I
15  
at V , single phase, half wave, Tj125℃  
On-State Current 270A, Tj125Inst. measurement  
TM  
V
1.40  
GT  
GT  
T
D
I V  
Tj25℃,I 1AV 6V  
100 2  
mA V  
/
/
1
GD  
V
D
DRM  
0.25  
10  
V
Tj125℃,V =/V  
2
1
tgt  
T
G
D
DRM  
G
I 90AI 100mATj25V =/V dI dt0.1A μs  
μs  
/
/
2
2
Critical Rate of Rise of Off-State Voltage, min.  
Holding Current, typ.  
D
DRM  
500  
50  
dvdt  
Tj125, V =/V , Exponential wave.  
V μs  
/
3
H
I
mA  
mA  
Tj25℃  
L
I
Lutching Current, typ.  
100  
0.30  
Tj25℃  
Junction to case  
Rthj-c)*Thermal Impedance, max.  
W  
/
markThyristor and Diode part. No markThyristor part  
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com  

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