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PK8C2BA PDF预览

PK8C2BA

更新时间: 2024-11-12 17:15:31
品牌 Logo 应用领域
尼克森微 - NIKOSEM 光电二极管
页数 文件大小 规格书
6页 412K
描述
PDFN 5x6

PK8C2BA 数据手册

 浏览型号PK8C2BA的Datasheet PDF文件第2页浏览型号PK8C2BA的Datasheet PDF文件第3页浏览型号PK8C2BA的Datasheet PDF文件第4页浏览型号PK8C2BA的Datasheet PDF文件第5页浏览型号PK8C2BA的Datasheet PDF文件第6页 
N-Channel Enhancement Mode  
Field Effect Transistor  
PK8C2BA  
PDFN 5x6P  
NIKO-SEM  
Halogen-Free & Lead-Free  
PRODUCT SUMMARY  
V(BR)DSS  
40V  
RDS(ON)  
ID  
43A  
D
9mΩ  
G
Features  
S
• Pb−Free, Halogen Free and RoHS compliant.  
• Low RDS(on) to Minimize Conduction Losses.  
• Ohmic Region Good RDS(on) Ratio.  
D
D
D
D
• Optimized Gate Charge to Minimize Switching Losses.  
G. GATE  
D. DRAIN  
S. SOURCE  
Applications  
Protection Circuits Applications.  
Computer for DC to DC Converters Applications.  
100% UIS Tested  
100% Rg Tested  
#1  
S
S
S
G
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)  
PARAMETERS/TEST CONDITIONS  
Drain-Source Voltage  
SYMBOL  
VDS  
LIMITS  
UNITS  
40  
V
V
Gate-Source Voltage  
VGS  
±20  
TC = 25 °C  
43  
Continuous Drain Current4  
Pulsed Drain Current1  
Continuous Drain Current  
ID  
IDM  
ID  
TC = 100 °C  
27  
79  
A
TA = 25 °C  
TA = 70 °C  
13  
11  
Avalanche Current  
Avalanche Energy  
IAS  
40  
L = 0.01mH  
TC = 25 °C  
TC = 100 °C  
TA = 25 °C  
TA = 70 °C  
EAS  
8
mJ  
W
31  
Power Dissipation  
Power Dissipation3  
PD  
13  
3
PD  
W
1.9  
Operating Junction & Storage Temperature Range  
Tj, Tstg  
-55 to 150  
°C  
N-34-5  
REV 1.0  
1

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