Datasheet > PK650DY

PK650DY

更新时间： 2024-09-16 17:15:43

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
7页	575K
描述
PDFN 5x6

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中文翻译

获取价格

数据手册

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PK650DY 数据手册

Dual N-Channel Enhancement Mode

Field Effect Transistor

PK650DY

NIKO-SEM

PDFN 5x6P

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

R_DS(ON)

2.8mΩ

11mΩ

I_D

30V

83A

36A

Features

• Pb−Free, Halogen Free and RoHS compliant.

• Low R_DS(on)to Minimize Conduction Losses.

• Ohmic Region Good R_DS(on)Ratio.

1 : G1

• Optimized Gate Charge to Minimize Switching Losses.

2,3,4 : D1

5,6,7 : S2

8 : G2

Applications

• Protection Circuits Applications.

• Logic/Load Switch Circuits Applications

• Computer for DC to DC Converters Applications.

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

±20

UNITS

Gate-Source Voltage

V_GS

±20

T_C= 25 °C

Continuous Drain Current³

Pulsed Drain Current¹

Continuous Drain Current

I_D

I_DM

I_D

T_C= 100 °C

130

T_A= 25 °C

T_A= 70 °C

Avalanche Current

Avalanche Energy

I_AS

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

E_AS

135

Power Dissipation

P_D

2.4

1.5

P_D

1.3

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

H-21-2

REV1.1

12 3 4 5 6 7

中文翻译

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