Datasheet > PK636BA

PK636BA

更新时间： 2024-11-21 17:15:31

品牌	Logo	应用领域
尼克森微 - NIKOSEM		光电二极管
页数	文件大小	规格书
4页	689K
描述
PDFN 5x6

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中文翻译

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数据手册

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PK636BA 数据手册

PK636BA

N-Channel Enhancement Mode

Field Effect Transistor

NIKO-SEM

PDFN 5x6P

Halogen-Free & Lead-Free

PRODUCT SUMMARY

V_(BR)DSS

30V

R_DS(ON)

I_D

46A

8mΩ

G. GATE

D. DRAIN

S. SOURCE

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

SYMBOL

V_DS

LIMITS

UNITS

Gate-Source Voltage

V_GS

±20

T_C= 25 °C

Continuous Drain Current³

Pulsed Drain Current¹

Continuous Drain Current

I_D

I_DM

I_D

T_C= 100 °C

120

T_A= 25 °C

T_A= 70 °C

9.7

Avalanche Current

Avalanche Energy

I_AS

L = 0.1mH

T_C= 25 °C

T_C= 100 °C

T_A= 25 °C

T_A= 70 °C

E_AS

Power Dissipation

P_D

2.1

1.3

P_D

Operating Junction & Storage Temperature Range

T_j, T_stg

-55 to 150

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Ambient²

Junction-to-Case

SYMBOL

TYPICAL

MAXIMUM

UNITS

°C / W

R_JA

R_JC

4.1

¹Pulse width limited by maximum junction temperature.

²The value of R_θJAis measured with the device mounted on 1in²FR-4 board with 2oz. Copper, in a still air

environment with T_A=25°C.

³Package limitation current is 20A.

N-27-3

REV 1.2

12 3 4

中文翻译

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