Datasheet > PJQ1900

PJQ1900

更新时间： 2022-02-26 14:37:11

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	333K
描述
20V N-Channel Enhancement Mode MOSFET

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PJQ1900 数据手册

PPJQ1900

20V N-Channel Enhancement Mode MOSFET

DFN 3L

Unit: inch(mm)

20 V

1.2 A

Voltage

Current

Features

 Low Voltage Drive (1.2V).

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc.

 ESD Protected

 Lead free in compliance with EU RoHS 2011/65/EU

directive.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: DFN 3L Package

 Terminals: Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.00004 ounces, 0.0011 grams

 Marking: 0

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

+10

T_A=25^oC

T_sp=25^oC ^{(Note 3)}

1.2

Continuous Drain Current

Pulsed Drain Current, tp<10us

Power Dissipation

I_D

I_DM

2.0

4.0

mW/ ^oC

^oC

T_A=25^oC

Derate above 25^oC

900

P_D

7.2

Operating Junction and Storage Temperature Range

Typical Thermal resistance

T_J,T_STG

-55~150

Junction to Ambient, t<10s ^{(Note 4)}

^oC/W

R_θJA

139

August 28,2015-REV.00

Page 1

12 3 4 5 6

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