PJQ2410
30V N-Channel Enhancement Mode MOSFET
DFN2020B-6L
30 V
10 A
Voltage
Current
Features
RDS(ON), VGS@10V,ID@5A<12mΩ
RDS(ON), VGS@4.5V,ID@3A<18mΩ
High switching speed
Improved dv/dt capability
Low gate charge
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Mechanical Data
Case : DFN2020B-6L Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.0003 ounces, 0.0086 grams
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNITS
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
ID
30
+20
10
V
V
TA=25oC
Continuous Drain Current
Pulsed Drain Current (Note 1)
A
IDM
40
TA=25oC
2.0
W
mW/ oC
oC
Power Dissipation
PD
Derate above 25oC
16
Operating Junction and Storage Temperature Range
TJ,TSTG
-55~150
Typical Thermal Resistance
RθJA
62.5
(Note 6)
-
Junction to Ambient, t≦10s
oC/W
June 17,2021
PJQ2410-REV.02
Page 1