Datasheet > PJQ1938

PJQ1938

更新时间： 2023-12-06 20:03:45

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	387K
描述
DFN1006-3L

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PJQ1938 数据手册

PJQ1938

50V N-Channel Enhancement Mode MOSFET

DFN1006-3L

Voltage

Current

50 V

600mA

Features

● RDS(ON), VGS@10V, ID@500mA<1.45Ω

● RDS(ON), VGS@4.5V, ID@200mA<1.95Ω

● RDS(ON), VGS@2.5V, ID@100mA<4Ω

● RDS(ON), VGS@1.8V, ID@10mA<6Ω

● ESD Protected 2KV HBM

● Specially Designed for Switch Load

● Lead free in compliance with EU RoHS 2.0

● Green molding compound as per IEC 61249 standard

Mechanical Data

● Case : DFN1006-3L Package

● Terminals : Solderable per MIL-STD-750, Method 2026

● Approx. Weight : 0.00002 ounces, 0.0007 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

I_D

±20

Continuous Drain Current^{(Note 4)}

Pulsed Drain Current^{(Note 1)}

600

800

I_DM

T_A=25^oC

900

mW/ ^oC

^oC

Power Dissipation

Derate above 25^oC

7.2

Operating Junction and Storage Temperature Range

Typical Thermal Resistance

T_J,T_STG

R_θJA

-55~150

139

^oC/W

Junction to Ambient, t<10s^{(Note 5)}

December 15,2021

PJQ1938-REV.00

Page 1

12 3 4 5 6

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