Datasheet > PJQ1900

PJQ1900

更新时间： 2022-02-26 14:37:11

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	333K
描述
20V N-Channel Enhancement Mode MOSFET

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PJQ1900 数据手册

PPJQ1900

Electrical Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNITS

Static

Drain-Source Breakdown Voltage

Gate Threshold Voltage

BV_DSS

V_GS(th)

V_GS=0V, I_D=250uA

V_DS=V_GS, I_D=250uA

V_GS=4.5V, I_D=600mA

V_GS=2.5V, I_D=200mA

V_GS=1.8V, I_D=100mA

V_GS=1.5V, I_D=50mA

V_GS=1.2V, I_D=20mA

V_DS=16V, V_GS=0V

V_GS=+8V, V_DS=0V

0.3

0.65

300

350

400

500

1000

0.9

400

650

800

1200

3000

Drain-Source On-State Resistance

R_DS(on)

mΩ

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

Dynamic ^{(Note 6)}

I_DSS

I_GSS

+0.5

+10

Total Gate Charge

Q_g

Q_gs

Q_gd

Ciss

Coss

Crss

td_(on)

1.4

0.22

0.21

V_DS=10V, I_D=300mA,

V_GS=4.5V ^{(Note 2)}

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

V_DS=10V, V_GS=0V,

f=1.0MHZ

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

2.8

V_DD=10V, I_D=150mA,

V_GS=4.0V,

R_G=10Ω ^{(Note 1,2)}

Turn-On Rise Time

Turn-Off Delay Time

td_(off)

Turn-Off Fall Time

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

I_S

---

300

1.3

Diode Forward Voltage

V_SD

I_S=300mA, V_GS=0V

0.87

NOTES :

1. Pulse width<300us, Duty cycle<2%

2. Essentially independent of operating temperature typical characteristics.

3. Tsp is the temperature at the soldering point of the source lead.

4. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is

defined as the solder mounting surface of the drain pins mounted on a 1inch FR-4 with 2oz. square pad of copper.

5. The maximum current rating is package limited

6. Guaranteed by design, not subject to production testing.

August 28,2015-REV.00

Page 2

123 4 5 6

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