Datasheet > PJA3419

PJA3419

更新时间： 2024-10-03 01:24:03

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	335K
描述
20V P-Channel Enhancement Mode MOSFETâ ESD Protected

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PJA3419 数据手册

PPJA3419

20V P-Channel Enhancement Mode MOSFET– ESD Protected

SOT-23

Unit: inch(mm)

-20 V

-4.0A

Voltage

Current

Features

 RDS(ON) , VGS@-10V, ID@-4.0A<60mΩ

 RDS(ON) , VGS@-4.5V, ID@-3.3A<70mΩ

 RDS(ON) , VGS@-2.5V, ID@-2.0A<96mΩ

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc.

 ESD Protected 2KV HBM

 Lead free in compliance with EU RoHS 2011/65/EU directive

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case : SOT-23 Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight : 0.0003 ounces, 0.0084 grams

 Marking : A19

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

-20

+12

Continuous Drain Current

-4.0

(Note 4)

Pulsed Drain Current

I_DM

-16

T_a=25^oC

Derate above 25^oC

1.25

Power Dissipation

P_D

mW/ ^oC

^oC

Operating Junction and Storage Temperature Range

Typical Thermal resistance

T_J,T_STG

-55~150

Junction to Ambient ^{(Note 3)}

^oC/W

R_θJA

100

May 8,2015-REV.00

Page 1

12 3 4 5 6

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