Datasheet > PJA3419E

PJA3419E

更新时间： 2024-11-06 14:55:35

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	402K
描述
SOT-23

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中文翻译

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数据手册

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PJA3419E 数据手册

PJA3419E

20V P-Channel Enhancement Mode MOSFET– ESD Protected

SOT-23

Voltage

Current

-20 V

-3.7 A

Features

● RDS(ON), VGS@-4.5V, I_D@-3.3A<66mΩ

● RDS(ON), VGS@-2.5V, I_D@-2.0A<90mΩ

● RDS(ON), VGS@-1.8V, I_D@-0.5A<135mΩ

● Advanced Trench Process Technology

● ESD Protected HBM Class 1C

● Specially Designed for Switch Load, PWM Application, etc.

● Lead free in compliance with EU RoHS 2.0

● Green molding compound as per IEC 61249 standard

Mechanical Data

● Case : SOT-23 Package

● Terminals : Solderable per MIL-STD-750, Method 2026

● Approx. Weight : 0.0084 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

V_DS

-20

Drain-Source Voltage

Gate-Source Voltage

V_GS

±8

T_A=25^oC

-3.7

-3.1

Continuous Drain Current^{(Note 4)}

Pulsed Drain Current^{(Note 1)}

Power Dissipation

I_D

T_A=70^oC

T_A=25^oC

I_DM

-16

T_A=25^oC

1.25

mW/ ^oC

^oC

Derate above 25^oC

Operating Junction and Storage Temperature Range

Typical Thermal Resistance

T_J,T_STG

R_θJA

-55~150

100

^oC/W

Junction to Ambient^{(Note 5)}

July 15,2022

PJA3419E-REV.00

Page 1

12 3 4 5 6

中文翻译

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