Datasheet > PJA3435

PJA3435

更新时间： 2024-11-06 01:24:03

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	326K
描述
20V P-Channel Enhancement Mode MOSFET â ESD Protected

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PJA3435 数据手册

PPJA3435

20V P-Channel Enhancement Mode MOSFET – ESD Protected

SOT-23

Unit: inch(mm)

-20 V

-0.5A

Voltage

Current

Features

 Low Voltage Drive (1.2V).

 Advanced Trench Process Technology

 Specially Designed for Load switch, PWM Application, etc.

 ESD Protected

 Lead free in compliance with EU RoHS 2011/65/EU

directive.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: SOT-23 Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0003 ounces, 0.0084 grams

 Marking: A35

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

-20

+10

Continuous Drain Current

-0.5

(Note 4)

Pulsed Drain Current

I_DM

-1.0

T_a=25^oC

Derate above 25^oC

500

mW/ ^oC

^oC

Power Dissipation

P_D

Operating Junction and Storage Temperature Range

Typical Thermal resistance

T_J,T_STG

-55~150

Junction to Ambient ^{(Note 3)}

^oC/W

R_θJA

250

December 24,2014-REV.00

Page 1

12 3 4 5 6

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