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PJA3430 PDF预览

PJA3430

更新时间: 2024-11-05 12:02:43
品牌 Logo 应用领域
强茂 - PANJIT /
页数 文件大小 规格书
6页 301K
描述
20V N-Channel Enhancement Mode MOSFET – ESD Protected

PJA3430 数据手册

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PPJA3430  
20V N-Channel Enhancement Mode MOSFET – ESD Protected  
SOT-23  
Unit: inch(mm)  
20 V  
2A  
Voltage  
Current  
Features  
RDS(ON) , VGS@4.5V, ID@2.0A<150m  
RDS(ON) , VGS@2.5V, ID@1.5A<215mΩ  
RDS(ON) , VGS@1.8V, ID@0.5A<400mΩ  
Advanced Trench Process Technology  
Specially Designed for Switch Load, PWM Application, etc.  
ESD Protected  
Lead free in comply with EU RoHS 2011/65/EU directives.  
Green molding compound as per IEC61249 Std.  
(Halogen Free)  
Mechanical Data  
Case: SOT-23 Package  
Terminals : Solderable per MIL-STD-750, Method 2026  
Approx. Weight: 0.0003 ounces, 0.0084 grams  
Marking: A30  
Fig.160  
(TOP VIEW)  
Maximum Ratings and Thermal Characteristics (TA=25oC unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNITS  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
ID  
-20  
+8  
V
V
Continuous Drain Current  
-2  
A
A
(Note 4)  
Pulsed Drain Current  
IDM  
-4  
Ta=25oC  
Derate above 25oC  
1.25  
10  
W
Power Dissipation  
PD  
mW/ oC  
oC  
Operating Junction and Storage Temperature Range  
Thermal resistance  
TJ,TSTG  
-55~150  
Junction to Ambient (Note 3)  
oC/W  
RθJA  
100  
-
July 10,2013-REV.00  
Page 1  

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