Datasheet > PJA3430-AU

PJA3430-AU

更新时间： 2024-11-06 14:54:03

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	654K
描述
SOT-23

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中文翻译

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数据手册

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PJA3430-AU 数据手册

PJA3430-AU

20V N-Channel Enhancement Mode MOSFET – ESD Protected

SOT-23

20 V

Voltage

Current

Features

 R_DS(ON), V_GS@4.5V, I_D@2.0A<150mΩ

 R_DS(ON), V_GS@2.5V, I_D@1.5A<215mΩ

 R_DS(ON), V_GS@1.8V, I_D@0.3A<400mΩ

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc

 ESD Protected 2KV HBM

 AEC-Q101 qualified

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Mechanical Data

 Case : SOT-23 Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight : 0.0003 ounces, 0.0084 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

Continuous Drain Current^{(Note 4)}

Pulsed Drain Current^{(Note 1)}

I_DM

T_a=25^oC

1.25

mW/ ^oC

^oC

Power Dissipation

P_D

Derate above 25^oC

Operating Junction and Storage Temperature Range

Typical Thermal Resistance

T_J,T_STG

-55~150

R_θJA

100

Junction to Ambient^{(Note 3,4)}

^oC/W

June 1,2021

PJA3430-AU-REV.00

Page 1

12 3 4 5 6

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与PJA3430-AU相关器件

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