Datasheet > PJA3430_R1_00001

PJA3430_R1_00001

更新时间： 2024-11-05 12:02:43

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	301K
描述
20V N-Channel Enhancement Mode MOSFET â ESD Protected

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中文翻译

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数据手册

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PJA3430_R1_00001 数据手册

PPJA3430

20V N-Channel Enhancement Mode MOSFET – ESD Protected

SOT-23

Unit: inch(mm)

20 V

Voltage

Current

Features

 RDS(ON) , VGS@4.5V, ID@2.0A<150mΩ

 RDS(ON) , VGS@2.5V, ID@1.5A<215mΩ

 RDS(ON) , VGS@1.8V, ID@0.5A<400mΩ

 Advanced Trench Process Technology

 Specially Designed for Switch Load, PWM Application, etc.

 ESD Protected

 Lead free in comply with EU RoHS 2011/65/EU directives.

 Green molding compound as per IEC61249 Std.

(Halogen Free)

Mechanical Data

 Case: SOT-23 Package

 Terminals : Solderable per MIL-STD-750, Method 2026

 Approx. Weight: 0.0003 ounces, 0.0084 grams

 Marking: A30

Fig.160

(TOP VIEW)

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

I_D

-20

Continuous Drain Current

-2

(Note 4)

Pulsed Drain Current

I_DM

-4

T_a=25^oC

Derate above 25^oC

1.25

Power Dissipation

P_D

mW/ ^oC

^oC

Operating Junction and Storage Temperature Range

Thermal resistance

T_J,T_STG

-55~150

Junction to Ambient ^{(Note 3)}

^oC/W

R_θJA

100

July 10,2013-REV.00

Page 1

12 3 4 5 6

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