Datasheet > PJA3420E

PJA3420E

更新时间： 2024-10-03 14:54:47

品牌	Logo	应用领域
强茂 - PANJIT		/
页数	文件大小	规格书
6页	301K
描述
SOT-23

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中文翻译

获取价格

数据手册

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PJA3420E 数据手册

PJA3420E

20V N-Channel Enhancement Mode MOSFET– ESD Protected

SOT-23

Voltage

Current

20 V

5.1 A

Features

● RDS(ON), VGS@4.5V, I_D@5.1A<27mΩ

● RDS(ON), VGS@2.5V, I_D@3.2A<33mΩ

● RDS(ON), VGS@1.8V, I_D@2.0A<46mΩ

● Advanced Trench Process Technology

● ESD Protected HBM Class 1C

● Specially Designed for Switch Load, PWM Application, etc.

● Lead free in compliance with EU RoHS 2.0

● Green molding compound as per IEC 61249 standard

Mechanical Data

● Case : SOT-23 Package

● Terminals : Solderable per MIL-STD-750, Method 2026

● Approx. Weight : 0.0084 grams

Maximum Ratings and Thermal Characteristics (T_A=25^oC unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNITS

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

±8

T_A=25^oC

5.1

4.1

Continuous Drain Current^{(Note 4)}

Pulsed Drain Current^{(Note 1)}

Power Dissipation

I_D

T_A=70^oC

T_A=25^oC

I_DM

T_A=25^oC

1.3

mW/ ^oC

^oC

Derate above 25^oC

Operating Junction and Storage Temperature Range

Typical Thermal Resistance

T_J,T_STG

R_θJA

-55~150

100

^oC/W

Junction to Ambient^{(Note 5)}

July 15,2022

PJA3420E-REV.00

Page 1

12 3 4 5 6

中文翻译

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