Datasheet > PHX45NQ11T

PHX45NQ11T

更新时间： 2024-11-20 21:53:43

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	92K
描述
N-channel TrenchMOS standard level FET

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中文翻译

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PHX45NQ11T 数据手册

PHX45NQ11T

N-channel TrenchMOS™ standard level FET

Rev. 01 — 17 May 2004

Product data

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect transistor in a fully isolated encapsulated

plastic package using TrenchMOS™ technology.

1.2 Features

■ Low on-state resistance

■ Isolated package.

1.3 Applications

■ DC-to-DC converters

■ Switched-mode power supplies.

1.4 Quick reference data

■ V_DS≤ 110 V

■ P_tot≤ 62.5 W

■ I_D≤ 30.4 A

■ R_DSon≤ 25 mΩ.

2. Pinning information

Table 1:

Pinning - SOT186A (TO-220F) simpliﬁed outline and symbol

Description

gate (g)

Simpliﬁed outline

Symbol

drain (d)

source (s)

mounting base;

isolated

mbb076

2 3

MBK110

SOT186A (TO-220F)

12 3 4 5 6 7...12

中文翻译

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