Datasheet > PHX6N28T

PHX6N28T

更新时间： 2024-11-21 19:39:43

品牌	Logo	应用领域
飞利浦 - PHILIPS		/
页数	文件大小	规格书
5页	22K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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中文翻译

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技术参数
数据手册

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PHX6N28T 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
最大漏极电流 (Abs) (ID)：	5.5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	35 W	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

PHX6N28T 数据手册

Philips Semiconductors

Objective specification

TrenchMOS transistor

Standard level FET

PHX6N28T

FEATURES

QUICK REFERENCE DATA

• ’Trench’ technology

• Low on-state resistance

• Fast switching

• Stable off-state characteristics

• High thermal cycling performance

• Low thermal resistance

V_DSS= 275 V

I_D= 5.5 A

Ptot = 35 W

_DS(ON)≤ 450 mΩ

GENERAL DESCRIPTION

N-channel enhancement mode field-effect power transistor in a full pack plastic envelope using ’trench’ technology.

The device has low on-state resistance. It is intended for use in electronic lighting ballast circuits, dc to dc converters,

Switch Mode Power Supplies (SMPS) and general purpose switching applications.

The PHX6N28T is supplied in the SOT186A conventional leaded isolated package.

PINNING - SOT186A

PIN CONFIGURATION

SYMBOL

DESCRIPTION

case

gate

drain

source

case isolated

2 3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DSS

V_DGR

V_GS

I_D

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Continuous drain current

T_j= 25 ˚C to 175˚C

T_j= 25 ˚C to 175˚C; R_GS= 20 kΩ

275

± 20

5.5

3.5

˚C

T_mb= 25 ˚C

T_mb= 100 ˚C

T_mb= 25 ˚C

I_DM

P_D

T_j, T_stg

Pulsed drain current

Total power dissipation

Operating junction and stor-

age temperature

175

- 55

February 1998

Rev 1.000

12 3 4 5

中文翻译

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