Datasheet > PHP110NQ08LT

PHP110NQ08LT

更新时间： 2024-09-15 22:07:59

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
13页	90K
描述
N-channel TrenchMOS logic level FET

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数据手册

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PHP110NQ08LT 数据手册

PHP/PHB110NQ08LT

N-channel TrenchMOS™ logic level FET

Rev. 01 — 29 March 2004

Product data

1. Product proﬁle

1.1 Description

Logic level N-channel enhancement mode ﬁeld-effect transistor in a plastic package

using TrenchMOS™ technology.

1.2 Features

■ Logic level threshold

■ Very low on-state resistance.

1.3 Applications

■ Motors, lamps, solenoids

■ DC-to-DC converters

■ Uninterruptible power supplies

■ General industrial applications.

1.4 Quick reference data

■ V_DS≤ 75 V

■ P_tot≤ 230 W

■ I_D≤ 75 A

■ R_DSon≤ 8.5 mΩ.

2. Pinning information

Table 1:

Pin Description

Pinning - SOT78 (TO-220AB) and SOT404 (D²-PAK), simpliﬁed outline and symbol

Simpliﬁed outline

Symbol

gate (g)

[1]

drain (d)

source (s)

mb mounting base;

connected to

drain (d)

MBB076

MBK116

MBK106

2 3

SOT404 (D²-PAK)

SOT78 (TO-220AB)

[1] It is not possible to make connection to pin 2 of the SOT404 package.

12 3 4 5 6 7...13

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