Datasheet > PHMB1200B12

PHMB1200B12

更新时间： 2024-01-01 23:51:37

品牌	Logo	应用领域
NIEC		双极性晶体管
页数	文件大小	规格书
3页	197K
描述
IGBT MODULE Single 1200A 1200V

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技术参数
数据手册

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PHMB1200B12 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.73
Base Number Matches：	1

PHMB1200B12 数据手册

TENTATIVE

IGBT MODULE Single 1200A 1200V

PHMB1200B12

CIRCUIT

OUTLINEDRAWING

4- fasten- tab No 110

Dimension(mm)

Approximate Weight : 1,200g

MAXMUM RATINGS (Tc=25°C)

Item

Symbol

PHMB1200B12

Unit

Collector-Emitter Voltage

Gate - Emitter Voltage

V_CES

V_GES

I_C

1200

+/ - 20

1200

1 ms

Collector Current

I_CP

2400

Collector Power Dissipation

Junction Temperature Range

Storage Temperature Range

Isolation Voltage Terminal to Base AC, 1 min.)

Module Base to Heat sink

P_C

5600

°C

-40 to +150

-40 to +125

2500

T_stg

ISO

Mounting Torque

F_TOR

N•m

Bus Bar to Main Terminals

1.4

10.5

ELECTRICAL CHARACTERISTICS (Tc=25°C)

Characteristic

Collector-Emitter Cut-Off Current

Gate-Emitter Leakage Current

Collector-Emitter Saturation Voltage

Gate-Emitter Threshold Voltage

Input Capacitance

Symbol

I_CES

I_GES

V_CE(sat)

V_GE(th)

Cies

Test Condition

V_CE=1200V,V_GE=0V

V_GE=+/- 20V,V_CE=0V

I_C=1200A,V_GE=15V

V_CE=5V,I_C=400mA

V_CE=10V,V_GE=0V,f=1MHz

Min.

4.0

Typ.

1.9

Max.

1.0

2.4

8.0

Unit

µA

100000

Rise Time

Turn-on Time

Fall Time

Turn-off Time

t_on

t_f

V_CC= 600V

0.25

0.40

0.25

1.00

0.45

0.70

0.35

1.50

R_L= 0.5 ohm

R_G= 0.33 ohm

V_GE= +/- 15V

Switching Time

µs

t_off

FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)

Item

Symbol

I_F

I_FM

Rated Value

1200

Unit

1 ms

Forward Current

2400

Characteristic

Peak Forward Voltage

Symbol

Test Condition

I_F=1200A,V_GE=0V

Min.

Typ.

1.9

Max.

2.4

Unit

V_F

Reverse Recovery Time

t_rr

0.4

0.5

I_F=1200A,V_GE=-10V,di/dt=2400A/µs

µs

THERMAL CHARACTERISTICS

Characteristic

Symbol

Test Condition

Junction to Case

Min.

Typ.

Max.

0.022

0.043

Unit

IGBT

DIODE

Thermal Impedance

th(j-c)

°C/W

12 3

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