Datasheet > PH3855L

PH3855L

更新时间： 2024-09-13 22:44:27

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	82K
描述
N-channel TrenchMOS logic level FET

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PH3855L 数据手册

PH3855L

N-channel TrenchMOS™ logic level FET

Rev. 01 — 26 January 2005

Product data sheet

1. Product proﬁle

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS™ technology.

1.2 Features

■ Logic level threshold

■ Surface mounted package.

1.3 Applications

■ DC-to-DC converters

■ Motors, lamps, solenoids

■ General purpose power switching

■ 12 V and 24 V loads.

1.4 Quick reference data

■ V_DS≤ 55 V

■ I_D≤ 24 A

■ R_DSon≤ 36 mΩ

■ Q_gd= 5.5 nC (typ).

2. Pinning information

Table 1:

Pinning

Description

source

Simpliﬁed outline

Symbol

1, 2, 3

gate

mounting base;

connected to drain

mbb076

Top view

SOT669 (LFPAK)

12 3 4 5 6 7...12

中文翻译

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PH3855L 替代型号

型号	品牌	替代类型	描述	数据表
PH3855L,115	NXP	类似代替	PH3855L - N-channel TrenchMOS logic level FET SOIC 4-Pin
PSMN5R8-40YS	NXP	功能相似	N-channel LFPAK 40 V 5.7 mΩ standard level MO
PSMN014-40YS	NXP	功能相似	N-channel LFPAK 40 V, 14 mΩ standard level MO

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