Datasheet > PF08114B

PF08114B

更新时间： 2024-09-17 23:27:27

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PF08114B 数据手册

PF08114B

MOS FET Power Amplifier Module

for E-GSM and DCS1800 Dual Band Handy Phone

ADE-208-1029B (Z)

Rev.2

Dec. 2001

Application

•

Dual band amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz)

For 3.5 V nominal operation

Features

•

2 in / 2 out dual band amplifier

Simple external circuit including output matching circuit

Simple power control

2stage amplifier : 10 dBm input Typ

Lead less thin & small package : 8 × 12.3 × 1.6 mm Typ

High efficiency : 54% Typ at 34.5 dBm for E-GSM

: 52% Typ at 31.5 dBm for DCS1800

Pin Arrangement

• RF-K1-10

1: Pin _GSM

2: Vapc

3: Vdd2

4: Pout _GSM

5: GND

6: Pout _DCS

7: Vdd1

8: Vband

9: Pin _DCS

10: GND

G: GND

12 3 4 5 6 7...15

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