Datasheet > PF08122B

PF08122B

更新时间： 2024-09-17 23:27:27

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

PF08122B 数据手册

PF08122B

MOS FET Power Amplifier Module

for E-GSM and DCS1800 Dual Band Handy Phone

ADE-208-1400H (Z)

Rev.8

Jul. 2002

Application

•

Dual band amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz).

For 3.5 V & GPRS Class12 operation compatible

Features

•

All in one including output matching circuit

Simple external circuit

Simple power control

High gain 3stage amplifier : 0 dBm input Typ

Lead less thin & Small package : 8 × 13.75 × 1.6 mm Typ

High efficiency : 55% Typ at 35.0 dBm for E-GSM

50% Typ at 32.5 dBm for DCS1800

Lower consume current at low power

100 mA Typ at 7 dBm for E-GSM

•

60 mA Typ at 5 dBm for DCS1800

Pin Arrangement

• RF-K-8A

1: Pin _GSM

2: Vapc

3: Vdd1

4: Pout _GSM

5: Pout _DCS

6: Vdd2

7: Vctl

8: Pin _DCS

G: GND

12 3 4 5 6 7...11

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
PF08123B	ETC	获取价格
PF08127B	RENESAS	获取价格	MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone
PF08127B-TB	RENESAS	获取价格	暂无描述
PF08134B	RENESAS	获取价格	MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone
PF083A	OMRON	获取价格	General-purpose Relays and Power Relays Sockets
PF083A-D	OMRON	获取价格	Relay Socket,
PF083A-E	OMRON	获取价格	GENERAL PURPOSE RELAY
PF085A	OMRON	获取价格	Economical, Compact, Plug-in Timer
PF0E102MF080A00CR0	HWE	获取价格	导电高分子
PF0E102MF115A00CR0	HWE	获取价格	导电高分子