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PF08127B PDF预览

PF08127B

更新时间: 2024-11-06 22:26:39
品牌 Logo 应用领域
瑞萨 - RENESAS 放大器功率放大器分布式控制系统GSMDCS电话
页数 文件大小 规格书
16页 182K
描述
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone

PF08127B 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.83其他特性:IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ AND 1850 TO 1910 MHZ
特性阻抗:50 Ω构造:COMPONENT
最大输入功率 (CW):10 dBm最大工作频率:915 MHz
最小工作频率:880 MHz最高工作温度:100 °C
最低工作温度:-30 °C射频/微波设备类型:NARROW BAND LOW POWER
最大电压驻波比:3Base Number Matches:1

PF08127B 数据手册

 浏览型号PF08127B的Datasheet PDF文件第2页浏览型号PF08127B的Datasheet PDF文件第3页浏览型号PF08127B的Datasheet PDF文件第4页浏览型号PF08127B的Datasheet PDF文件第5页浏览型号PF08127B的Datasheet PDF文件第6页浏览型号PF08127B的Datasheet PDF文件第7页 
To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

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