Datasheet > PESD2IVN24T-Q

PESD2IVN24T-Q

更新时间： 2024-11-19 11:12:23

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
12页	276K
描述
ESD protection for In-vehicle networksProduction

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PESD2IVN24T-Q 数据手册

PESD2IVN24T-Q

ESD protection for In-vehicle networks

4 July 2022

Product data sheet

1. General description

ESD protection device in a small SOT23 Surface-Mounted Device (SMD) plastic package,

designed to protect two automotive In-vehicle network bus lines from the damage caused by

ElectroStatic discharge (ESD) and other transients.

2. Features and benefits

•

Reverse stand-off voltage: V_RWM= 24 V

•

Low clamping voltage: V_CL= 33 V at I_PPM= 3.5 A

Typ. diode capacitance matching: ∆C_d/C_d= 0.1 %

ESD protection up to 30 kV (IEC 61000-4-2)

ESD protection up to 30 kV (ISO 10605; C = 330 pF, R = 330 Ω)

ISO 7637-3: Pulse a: V_S= -150 V / Pulse b: V_S= +100 V

Ultra low leakage current: I_RM= 1 nA

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

ESD protection for In-vehicle network lines in automotive environments

•

CAN

LIN

FlexRay

SENT

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_RWM

reverse standoff

voltage

T_amb= 25 °C

I_PPM

V_CL

rated peak pulse

current

t_p= 8/20 µs

[1] [2]

3.5

clamping voltage

I_PPM= 3.5 A; t_p= 8/20 µs; T_amb= 25 °C [3] [2]

[1] According to IEC 61000-4-5.

[2] Measured from pin 1 or 2 to pin 3.

[3] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.

12 3 4 5 6 7...12

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