Datasheet > PDTC114EU115

PDTC114EU115

更新时间： 2024-09-17 12:18:39

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
17页	717K
描述
NPN resistor-equipped transistors; R1 = 10 kï, R2 = 10 kï

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数据手册

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PDTC114EU115 数据手册

PDTC114E series

NPN resistor-equipped transistors;

R1 = 10 k, R2 = 10 k

Rev. 12 — 21 December 2011

Product data sheet

1. Product profile

1.1 General description

NPN Resistor-Equipped Transistor (RET) family in small Surface-Mounted Device (SMD)

plastic packages.

Table 1.

Product overview

Type number

Package

NXP

PNP

complement

Package

configuration

JEITA

SC-75

SC-101

JEDEC

PDTC114EE

PDTC114EM

PDTC114ET

PDTC114EU

SOT416

SOT883

SOT23

SOT323

PDTA114EE

PDTA114EM

ultra small

leadless ultra small

small

TO-236AB PDTA114ET

PDTA114EU

SC-70

very small

1.2 Features and benefits

 100 mA output current capability

 Built-in bias resistors

 Reduces component count

 Reduces pick and place costs

 AEC-Q101 qualified

 Simplifies circuit design

1.3 Applications

 Digital application in automotive and

industrial segments

 Cost-saving alternative for BC847/857

series in digital applications

 Switching loads

 Control of IC inputs

1.4 Quick reference data

Table 2.

Symbol

V_CEO

I_O

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

collector-emitter voltage

output current

open base

100

k

bias resistor 1 (input)

bias resistor ratio

1.0

R2/R1

0.8

1.2

12 3 4 5 6 7...17

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