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PDTC114TM PDF预览

PDTC114TM

更新时间: 2024-11-06 22:50:43
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管开关
页数 文件大小 规格书
14页 90K
描述
PNP resistor-equipped transistors; R1 = 10 kOHM, R2 = open

PDTC114TM 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SC-101
包装说明:1.0 X 0.6 MM, 0.5 MM HEIGHT, ULTRA SMALL, PLASTIC, SC-101, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.21其他特性:BUILT-IN BIAS RESISTOR
外壳连接:COLLECTOR最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):200JESD-30 代码:R-PBCC-N3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):260极性/信道类型:NPN
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin (Sn)端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PDTC114TM 数据手册

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DISCRETE SEMICONDUCTORS  
DATA SHEET  
PDTA114T series  
PNP resistor-equipped transistors;  
R1 = 10 k, R2 = open  
Product specification  
2004 Aug 02  
Supersedes data of 2003 Sep 09  

PDTC114TM 替代型号

型号 品牌 替代类型 描述 数据表
PDTC114TM,315 NXP

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PDTC114T series - NPN resistor-equipped transistors; R1 = 10 kOhm, R2 = open DFN 3-Pin

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