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PDTC114YM,315 PDF预览

PDTC114YM,315

更新时间: 2024-11-26 15:47:43
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
17页 719K
描述
PDTC114Y series - NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ DFN 3-Pin

PDTC114YM,315 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:DFN包装说明:1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.38
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 4.7外壳连接:COLLECTOR
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):100
JESD-30 代码:R-PBCC-N3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.25 W
认证状态:Not Qualified子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin (Sn)
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PDTC114YM,315 数据手册

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PDTC114Y series  
NPN resistor-equipped transistors;  
R1 = 10 k, R2 = 47 k  
Rev. 7 — 18 November 2011  
Product data sheet  
1. Product profile  
1.1 General description  
NPN Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD)  
plastic packages.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
PNP  
complement  
Package  
configuration  
JEITA  
SC-75  
SC-101  
-
JEDEC  
PDTC114YE  
PDTC114YM  
PDTC114YT  
PDTC114YU  
SOT416  
SOT883  
SOT23  
SOT323  
-
-
PDTA114YE  
PDTA114YM  
ultra small  
leadless ultra small  
small  
TO-236AB PDTA114YT  
PDTA114YU  
SC-70  
-
very small  
1.2 Features and benefits  
100 mA output current capability  
Built-in bias resistors  
Reduces component count  
Reduces pick and place costs  
AEC-Q101 qualified  
Simplifies circuit design  
1.3 Applications  
Digital applications in automotive and  
industrial segments  
Cost-saving alternative for BC847/857  
series in digital applications  
Switching loads  
Control of IC inputs  
1.4 Quick reference data  
Table 2.  
Symbol  
VCEO  
IO  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
-
Max  
50  
Unit  
V
collector-emitter voltage  
output current  
open base  
-
-
-
100  
13  
mA  
k  
R1  
bias resistor 1 (input)  
bias resistor ratio  
7
10  
4.7  
R2/R1  
3.7  
5.7  
 
 
 
 
 

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