PRELIMINARY
PDM4M3120
AC Electrical Characteristics (Vcc = 3.3V ± 10%, T = 0°C to +70°C)
A
PDM4M3120SXXZ, PDM4M3120SXXM
-20 ns -15 ns -12 ns
Min. Max. Min. Max. Min. Max.
Symbol
Parameter
Unit
Read Cycle
t
t
t
t
t
t
t
t
t
t
t
Read Cycle Time
20
—
15
—
12
—
ns
ns
RC
Address Access Time
—
20
—
15
—
12
AA
Chip Select Access Time
—
3
20
—
10
—
7
—
3
15
—
8
—
3
12
—
7
ns
ns
ns
ns
ns
ns
ns
ns
ns
ACS
(1)
Chip Select to Output inLow-Z
Output Enable to Output Valid
Output Enable to Output in Low-Z
Chip Deselect to Output in High-Z
Output Disable to Output in High-Z
Output Hold from Address Change
Chip Select to Power-Up Time
Chip Deselect to Power-Down Time
CLZ
OE
—
0
—
0
—
0
(1)
(1)
—
7
—
7
OLZ
—
—
3
—
—
3
—
—
3
CHZ
OHZ
OH
(1)
7
7
7
—
—
20
—
—
15
—
—
12
(1)
0
0
0
PU
(1)
—
—
—
PD
Write Cycle
t
t
t
t
t
t
t
t
t
t
Write Cycle Time
20
12
12
0
—
—
—
–
15
10
10
0
—
—
—
—
—
—
7
12
10
10
0
—
—
—
—
—
—
7
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
WC
CW
AW
AS
Chip Select to End of Write
Address Valid to End of Write
Address Setup Time
Write Pulse Width
15
3
—
—
7
13
3
12
3
WP
WR
WHZ
DW
DH
Write Recovery Time
(1)
Write Enable to Output in High-Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
—
12
0
—
10
0
—
10
0
—
—
—
—
—
—
—
—
—
(1)
OW
0
0
0
NOTE 1. This parameter is determined by device characteristics but is not production tested.
6
Rev 1.1